Effect of circuit parameters and topology on intermodulation in MESFET circuits

D. Webster, A. Parker, D. Haigh, J.B. Scott
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引用次数: 5

Abstract

Third-order intermodulation intercept is a very important criterion in communication circuits and the authors present a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET second-order nonlinearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterization techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.<>
电路参数和拓扑结构对MESFET电路互调的影响
三阶互调截获是通信电路中一个非常重要的准则,作者对其机制进行了初步研究。结果表明,MESFET的二阶非线性特性与线性电路和寄生元件的相互作用会造成严重的畸变。MESFET输出电导也会引起相互作用效应。因此,可以获得与标准器件表征技术预测的截点完全不同的截点。已经确定了一些性能增强的区域。电路拓扑在确定失真方面也起着关键作用。给出了一些实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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