High performance integrated PA, T/R switch for 1.9 GHz personal communications handsets

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394506

P. O'Sullivan, G. St. Onge, E. Heaney, F. McGrath, C. Kermarrec

引用次数: 14

Abstract

The authors present a state of the art power amplifier and T/R switch GaAs MMIC product for the 1.9 GHz Japanese PHP system. The design consists of a single die (1.8 mm /spl times/ 1.2 mm) in a 28 pin QSOP surface mount plastic package. The two stage power amplifier exhibits 28 dB gain with greater than 44% PAE at a P1dB of 23 dBm. The adjacent channel interference level is better than 60 dBc at /spl plusmn/600 kHz when tested at this rated output power. The T/R switch exhibits 1 dB insertion loss, 30 dB isolation and OIP3 of greater than 44 dBm when used with two 0.25 watt tones.<>

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用于1.9 GHz个人通信手持设备的高性能集成扩音、收发开关

介绍了一种用于1.9 GHz日本PHP系统的功率放大器和收发开关GaAs MMIC产品。该设计由一个28引脚QSOP表面贴装塑料封装中的单个模具(1.8 mm /spl倍/ 1.2 mm)组成。两级功率放大器在P1dB为23 dBm时具有28db增益，PAE大于44%。在此额定输出功率下测试时，相邻通道干扰电平在/spl plusmn/600 kHz时优于60 dBc。当与两个0.25瓦音调一起使用时，T/R开关具有1db插入损耗，30db隔离和大于44 dBm的OIP3

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

15th Annual GaAs IC Symposium

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