0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394471

T. Tsen, S. Tiku, J. Chun, E. Walton, C. Bhasker, J. Penney, R. Tang, K. Schneider, M. Campise

引用次数: 7

Abstract

A 0.5 /spl mu/m AlGaAs/GaAs HMESFET technology has been developed and used to fabricate several high speed, high density circuits, such as a 2.5 ns 16 K static RAM and 1 GHz gate array and standard cell circuits. A family of channel-less DCFL/SBFL gate arrays with raw gate count ranging from 10 K to 100 K for commercial and military applications are currently in production.<>

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0.5 /spl mu/m数字VLSI产品的AlGaAs/GaAs HMESFET技术

开发了一种0.5 /spl mu/m的AlGaAs/GaAs HMESFET技术，并用于制造几种高速、高密度电路，如2.5 ns 16k静态RAM和1ghz门阵列和标准单元电路。一系列无通道DCFL/SBFL门阵列，原始门计数范围从10 K到100 K，用于商业和军事应用，目前正在生产中

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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15th Annual GaAs IC Symposium

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