2006 25th International Conference on Thermoelectrics最新文献_第7页

Miniature Thermoelectric Modules with Increased Cooling Power 增加冷却功率的微型热电模块

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331216

V. Semenyuk

引用次数: 20

Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials 热电材料中外延嵌入ingaalas基半导体的半金属ErAs纳米复合材料

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331369

J. Zide, G. Zeng, J. Bahk, W. Kim, S. Singer, D. Vashaee, Z. Bian, R. Singh, J. Bowers, A. Majumdar, A. Shakouri, A. Gossard

{"title":"Nanocomposites of Semimetallic ErAs Nanoparticles Epitaxially Embedded within InGaAlAs-based Semiconductors for Thermoelectric Materials","authors":"J. Zide, G. Zeng, J. Bahk, W. Kim, S. Singer, D. Vashaee, Z. Bian, R. Singh, J. Bowers, A. Majumdar, A. Shakouri, A. Gossard","doi":"10.1109/ICT.2006.331369","DOIUrl":"https://doi.org/10.1109/ICT.2006.331369","url":null,"abstract":"We present the molecular beam epitaxial growth of nanocomposites consisting of semimetallic ErAs nanoparticles which are epitaxially embedded within InGaAlAs-based semiconductors. The properties of nanocomposites can be drastically different from that of the constituents, and in this case, the incorporation of ErAs is used to increase the thermoelectric power factor and decrease the lattice thermal conductivity, resulting in an increase in the figure of merit, ZT. In addition, the thermoelectric power factor is increased due to electron filtering (solid-state thermionic emission) by barriers within the composite. In one geometry, barriers of InGaAlAs, a wider bandgap semiconductor, are introduced into an ErAs:InGaAs nanocomposite. In a second geometry, ErAs particles are embedded directly into InGaAlAs. Electron filtering occurs due to the Schottky barriers which are formed surrounding the particles. We present a 400-element array based on these materials for thermoelectric power generation; a power density >1 W/cm2 is demonstrated with a temperature gradient of 120degC","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122400564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Thermoelectric properties of Pb doped [Ca2CoO3.1]0.62CoO2 Pb掺杂[Ca2CoO3.1]0.62CoO2的热电性质

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331235

H. Nakatsugawa, H. Jeong, R. Kim, N. Gomi

引用次数: 0

Enhancement of the Figure of Merit in Bi-microwire Arrays 双微线阵列中性能图的增强

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331336

H. Iwasaki, H. Morita, D. Chikamori, M. Koyano, Y. Hasegawa

{"title":"Enhancement of the Figure of Merit in Bi-microwire Arrays","authors":"H. Iwasaki, H. Morita, D. Chikamori, M. Koyano, Y. Hasegawa","doi":"10.1109/ICT.2006.331336","DOIUrl":"https://doi.org/10.1109/ICT.2006.331336","url":null,"abstract":"Figures of merit, ZT have been measured by the improved Harman method on Bi-microwire arrays, where the diameter of the microwire is changed from 6 mum to 50 mum. The ZT values are widely distributed among the several arrays, on the contrary to those for the bulk samples. Clear correlation between the microwire diameters and ZT cannot be seen among the measured arrays. Quite large ZT of 0.287 was obtained in the 50 mumPhi Bi-microwire array and was 2.6 times larger than that in the polycrystalline bulk material. Absolute value of the Seebeck coefficient, alpha increases with increasing ZT and the thermal conductivity, kappa decreases with ZT. The relationship of the Seebeck coefficient and the thermal conductivity with ZT shows similar behavior to those in bismuth single crystals reported previously. It is concluded that the large improvement of ZT is due to the homogeneous crystal orientation in Bi-microwires constituting the array. The obtained results are important in the development of the thermoelectric devices with much higher energy conversion efficiency. It is also emphasized that the Harman method, in which the Peltier heat is utilized, is very appropriate in the study of the microscopic thermoelectric system","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121297254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The study for photo-thermoelectric effect of Si-Ge-Au amorphous thin films as non-cooled type photo sensor Si-Ge-Au非晶薄膜作为非制冷型光传感器的光热电效应研究

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331306

Y. Okamoto, K. Fukui, K. Fujii, T. Suenaga, J. Morimoto

引用次数: 0

High-resolution electron microscopy of thermoelectric compounds Bi-(Sr,Ba)-Rh-O 热电化合物Bi-(Sr,Ba)- rh - o的高分辨率电子显微镜研究

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331286

K. Yubuta, S. Okada, Y. Miyazaki, I. Terasaki, T. Kajitani

{"title":"High-resolution electron microscopy of thermoelectric compounds Bi-(Sr,Ba)-Rh-O","authors":"K. Yubuta, S. Okada, Y. Miyazaki, I. Terasaki, T. Kajitani","doi":"10.1109/ICT.2006.331286","DOIUrl":"https://doi.org/10.1109/ICT.2006.331286","url":null,"abstract":"The crystal structures of thermoelectric (TE) compounds Bi1.91Sr2.0Rh1.77Ox and Bi 2.12Ba2.00Rh1.95Ox are investigated by means of electron diffraction measurements and high-resolution electron microscopy. These compounds have layered structures and consist of two interpenetrating subsystems exhibiting incommensurated periodicities along b-axis. Both subsystems, CdI2 -type RhO2 sheets and a distorted four-layered rock-salt (RS)-type (Bi,(Sr,Ba))O blocks, have common a-, c-axes and beta;-angles. On the other hand, the ratios of two axis lengths, i.e., b 1 (RhO2 sheet) / b2 (RS-type block), are irrational. Based on the cation ratio and b1/b2 value, the structural formulae are expressed as [(Bi1-x>Rhx)2(Sr1-yBi y)2O4+delta]0.63RhO2 with x = 0.077, y = 0.016 and delta = 0.46 for the Sr-system and [(Bi1-x>Rhx)2(Sr1-yBi y)2O4+delta]0.56RhO2 with x = 0.037, y = 0.047 and delta = 0.39 for the Ba-system, respectively. Based on the electron diffraction measurements, it is found that these compounds have irrational modulation vectors, q1 = -a* + 0.63b1* and q2 = 0.17b1* + c for Bi-Sr-Rh-O, and q1 = -a* + 0.56b1* and q 2 = 0.11b1* + 0.35c* for Bi-Ba-Rh-O, respectively, being the indications of (3+2) dimensional structures. High-resolution images taken with the incident electron beam parallel to the a- and c-axes clearly exhibit modulated atomic arrangements. These compounds are characterized by the displacement modulations in both RhO2 layers and the RS-type blocks","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116744339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band structure and thermoelectric properties of NaxCoO2 NaxCoO2的能带结构和热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331388

G.J. Zhao, K. Akai, M. Matsuura

引用次数: 0

Synthesis of nanocrystalline filled skutterudites by mechanical alloying 机械合金化法制备纳米晶填充方钨矿

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331321

D. Bérardan, E. Alleno, C. Godart, H. Benyakoub, H. Flandorfer, O. Rouleau, E. Leroy

{"title":"Synthesis of nanocrystalline filled skutterudites by mechanical alloying","authors":"D. Bérardan, E. Alleno, C. Godart, H. Benyakoub, H. Flandorfer, O. Rouleau, E. Leroy","doi":"10.1109/ICT.2006.331321","DOIUrl":"https://doi.org/10.1109/ICT.2006.331321","url":null,"abstract":"We report on the preparation of nanocrystalline filled skutterudites in the series CeyFe4-xCoxSb12 by mechanical alloying. X-ray diffraction and energy dispersive X-ray spectroscopy reveal that skutterudites can be prepared with an homogeneity range larger than what can be obtained by powder metallurgy (PM). Interestingly, no after-milling thermal treatment is required to prepare essentially single phase samples (~90-95%). This is an important difference with skutterudites prepared by PM which only form after long term annealing below the peritectic decomposition temperature. Differential thermal analysis shows that grain growth occurs above ~350degC and that the peritectic decomposition temperature is similar to PM- (i.e. 750degC for x = 1). Grain sizes are in the 12-30 nm range as deduced from Rietveld refinements of X-ray diffraction data and scanning electron microscopy. Cerium is trivalent in nanocrystalline filled skutterudites, as it is in samples prepared by PM. Both p-type and n-type skutterudites can be obtained but values of the Seebeck coefficient are of the same order of magnitude as in PM samples only for p-type skutterudites","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121943288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication of p- and n-type Thermoelectric Cobalt Oxides through the Powder-In-Tube Method 管内粉末法制备p型和n型热电钴氧化物

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331371

V. Braccini, C. Fanciulli, C. Bernini, M. Vignolo, M. Putti, G. Grasso, A. Siri

{"title":"Fabrication of p- and n-type Thermoelectric Cobalt Oxides through the Powder-In-Tube Method","authors":"V. Braccini, C. Fanciulli, C. Bernini, M. Vignolo, M. Putti, G. Grasso, A. Siri","doi":"10.1109/ICT.2006.331371","DOIUrl":"https://doi.org/10.1109/ICT.2006.331371","url":null,"abstract":"We report the synthesis and the physical characterization of p- and n-type thermoelectric oxides, i.e. respectively NaxCoO 2 with x nominally close to 0.75 and LaNi1-xCoxO3 with x nominally equal to 0.3, materials that can be used to build unicouples and therefore thermoelectric modules. In order to take advantage of the anisotropy of the NaxCoO2 crystal structure and of the resistivity, the powder-in-tube method usually used to fabricate superconducting tapes has been employed for the first time to produce thermoelectric wires and tapes, also based on the similarity between the thermoelectric cobalt oxides and the superconducting cuprates. Connectivity was improved through drawing, while texturing was induced in tapes through flat-rolling. This made it possible to significantly reduce the resistivity value, thus enhancing the power factor and the figure of merit of such oxides. Various cold working procedures have been exploited: this method is a fast, reliable way to produce TE legs on a large scale and it has been applied also to the production of the n-type LaNi1-xCoxO3","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122595200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Development of thin film thermoelectric sensors for a wide spectral range in the MEMS configuration 薄膜热电传感器在MEMS结构中的宽光谱范围的发展

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331328

Z. Dashevsky, E. Rabih, V. Kasiyan, A. Halfin, M. Dariel

{"title":"Development of thin film thermoelectric sensors for a wide spectral range in the MEMS configuration","authors":"Z. Dashevsky, E. Rabih, V. Kasiyan, A. Halfin, M. Dariel","doi":"10.1109/ICT.2006.331328","DOIUrl":"https://doi.org/10.1109/ICT.2006.331328","url":null,"abstract":"Thermal sensors have applications in various areas of science and engineering for detection, measurement, observation and control of radiation. The basic elements of these sensors are the absorbing layer and the thin film battery of thermocouples that measures the temperature difference between this layer and the ambient. At present, such sensors can be manufactured by the micro machining process. The essential feature of these sensors is a very thin silica substrate layer. In designing the sensor, the properties of all the layers must be taken into account for optimization of its structure. The sensors detectivity is controlled by the figure of merit of the thermoelectric layer. PbTe is well known material that has found widespread applications in thermoelectric devices. PbTe based materials display unique properties, which are used for optimization of the figure of merit of n- and p-type thermoelectric layers. A simulation model for estimating the characteristics of the film thermoelectric sensor was presented. It was shown Volt-Watt sensitivity is ap 350 V/W for a sensor based on PbTe thermoelectric battery deposited on thin SiO2 layer (thickness ap 1mum). The construction of this sensor can be realized in MEMS design using a Si substrate","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"309 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122320306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1