2006 25th International Conference on Thermoelectrics最新文献

Structural Characteristics of Bi2Te3 and Sb2Te3 films on (001) GaAs Substrates grown by MOCVD MOCVD生长(001)GaAs衬底上Bi2Te3和Sb2Te3薄膜的结构特性

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331284

Jeongha Kim, Sung-Do Kwon, D. Jeong, B. Ju, Seok-Jin Yoon, Jin-Sang Kim

引用次数: 4

High temperature thermoelectric properties of Czochralski-pulled Ba8Ga16Ge30 czochralski -pull Ba8Ga16Ge30的高温热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331265

M. Christensen, G. J. Snyder, B. Iversen

引用次数: 4

n-to-p Transition on K2Bi8-xSbxSe13 Series K2Bi8-xSbxSe13系列的n- p跃迁

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331383

T. Kyratsi, E. Hatzikraniotis, A. Tsiappos, K. Paraskevopoulos, M. Kanatzidis

引用次数: 0

Optimization of synthesis conditions for CoSb3 compounds prepared by Sb self-flux method Sb自通量法制备CoSb3化合物的合成条件优化

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331385

T. Souma, M. Ohtaki

引用次数: 0

High-temperature thermoelectric properties of Delafossite oxide CuRh1-xMgxO2 氧化delafosite CuRh1-xMgxO2的高温热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331289

H. Kuriyama, M. Nohara, T. Sasagawa, K. Takubo, T. Mizokawa, K. Kimura, H. Takagi

引用次数: 9

Thermoelectric Properties of Pressed Pellets and Pressureless Sintering in the K2Bi8Se13-xSx System K2Bi8Se13-xSx体系中压球团热电性能及无压烧结

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331346

A. Tsiappos, T. Kyratsi, M. Kanatzidis

引用次数: 0

Relation between zn content and thermoelectric properties of zn4+xsb3 (-0.12⩽x⩽0.12) zn含量与zn4+xsb3热电性能的关系(-0.12≤x≤0.12)

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331384

T. Souma, M. Ohtaki

引用次数: 0

Enhanced Thermoelectric Performance of Nanostructured ZnO: A possibility of selective phonon scattering and carrier energy filtering by nanovoid structure 纳米结构ZnO热电性能的增强:选择性声子散射和载流子能量过滤的可能性

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331368

M. Ohtaki, R. Hayashi

{"title":"Enhanced Thermoelectric Performance of Nanostructured ZnO: A possibility of selective phonon scattering and carrier energy filtering by nanovoid structure","authors":"M. Ohtaki, R. Hayashi","doi":"10.1109/ICT.2006.331368","DOIUrl":"https://doi.org/10.1109/ICT.2006.331368","url":null,"abstract":"Highly dispersed nanosized closed pores (nanovoids) are revealed to be effective to substantially enhance the thermoelectric performance of bulk sintered body of n-type Al-doped ZnO oxide, resulting in a dimensionless figure-of-merit of ZT = 0.65 at 1250 K. The nanovoid structure is built in a densely sintered Al-doped ZnO matrix by using combustible nanosized polymer particles as a void forming agent (VFA), the uniformity of the VFA distribution in the sintering mixture being greatly improved by employing planetary-type ball milling with high pulverizing capability. A combination of shortened mixing period and liquid mixing media enables us to prevent formation of oxygen-related defects in ZnO, and sintered samples thus obtained show the electrical conductivity (sigma) higher than that of those prepared with conventional ball milling. The sintered samples obtained in the present study also show the Seebeck coefficient (S) considerably larger than that of the control sample over the whole temperature range from 300 K to 1273 K, implying an enhancement of the thermopower possibly due to a carrier energy filtering effect by low-energy nanosized defects. Although a decrease in the thermal conductivity (kappa) is only of the same magnitude to that of the sigma values, the marked increase in both sigma and S gives rise to a significant enhancement of the power factor. With fairly suppressed kappa values, the nanovoid ZnO samples successfully attain a largest ZT value so far observed for n-type bulk oxide materials","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122561276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19

Combined Thermoelectric and Structure Characterizations of Patterned Nanowires 图案纳米线的热电和结构综合表征

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331358

A. Mavrokefalos, M. Pettes, S. Saha, F. Zhou, Li Shi

{"title":"Combined Thermoelectric and Structure Characterizations of Patterned Nanowires","authors":"A. Mavrokefalos, M. Pettes, S. Saha, F. Zhou, Li Shi","doi":"10.1109/ICT.2006.331358","DOIUrl":"https://doi.org/10.1109/ICT.2006.331358","url":null,"abstract":"Theoretical studies have suggested that Bi-based and III-V nanowire structures may have high thermoelectric figure of merit (ZT). It was found in a previous measurement that the thermoelectric properties of individual electro-deposited bismuth telluride nanowires are largely influenced by the crystal structure including crystalline quality, chemical composition, doping concentration, and surface roughness, all of which cannot be controlled readily in various bottom-up nanowire synthesis method. We have developed a top-down fabrication process of suspended indium arsenide (InAs) nanowires. Based on nanolithography and reactive ion etching, the nanowires are patterned from an epitaxial thin film deposited by molecular beam epitaxy with well-controlled doping concentration, which can be determined from Hall measurement. The thermoelectric properties of these top-down patterned III-V nanowires have been characterized using a new design of a suspended microdevice. The new device allows for transmission electron microscopy and energy dispersive X-ray spectroscopy analysis of the same nanowire assembled on the microdevice so as to establish the structure-thermoelectric properties relationships. This paper reports the measured thermoelectric properties of a patterned InAs nanowire with a rectangular cross section of 150 nm in width and 40 nm thickness in a temperature range between 100 K and 400 K. The obtained Seebeck coefficient, thermal conductivity, electrical conductivity, and ZT are -57.2 muV/K, 4.11 W/m K, 1350 S/m, and 0.00032, respectively, at temperature 300 K","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114526662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys 热电Pb-Te-Sb合金纳米结构的研究进展

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331326

T. Ikeda, V. Ravi, L. A. Collins, S. Haile, G. J. Snyder

引用次数: 3