2006 25th International Conference on Thermoelectrics最新文献

Structural Characteristics of Bi2Te3 and Sb2Te3 films on (001) GaAs Substrates grown by MOCVD MOCVD生长(001)GaAs衬底上Bi2Te3和Sb2Te3薄膜的结构特性

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331284

Jeongha Kim, Sung-Do Kwon, D. Jeong, B. Ju, Seok-Jin Yoon, Jin-Sang Kim

引用次数: 4

High temperature thermoelectric properties of Czochralski-pulled Ba8Ga16Ge30 czochralski -pull Ba8Ga16Ge30的高温热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331265

M. Christensen, G. J. Snyder, B. Iversen

引用次数: 4

FTIR Reflectivity spectra of Thermoelectric K2Sb8Se13 crystals 热电K2Sb8Se13晶体的FTIR反射率光谱

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331379

E. Hatzikraniotis, T. Hassapis, T. Kyratsi, K. Paraskevopoulos, M. Kanatzidis

引用次数: 0

Thermoelectric properties and local electronic structure of rare earth-doped Ca3Co2O6 稀土掺杂Ca3Co2O6的热电性质和局域电子结构

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331270

N. Nong, M. Ohtaki

{"title":"Thermoelectric properties and local electronic structure of rare earth-doped Ca3Co2O6","authors":"N. Nong, M. Ohtaki","doi":"10.1109/ICT.2006.331270","DOIUrl":"https://doi.org/10.1109/ICT.2006.331270","url":null,"abstract":"Thermoelectric properties of a series of rare earth metal-doped polycrystalline samples of (Ca1-xRx)3Co 2O6 with R = Gd, Tb, Dy and Ho (x = 0 - 0.1) were investigated in the temperature range from 300 K to 1300 K. In a high temperature region above 900 K, a partial rare earth substitution with R 3+ for Ca2+ resulted in appreciable increase in the Seebeck coefficient (S). However, the S value decreased abruptly at low temperatures, and turned to negative values for the Gd- and Tb-doped samples at temperatures below 400 K. With decreasing ionic radii of rare earth elements (Gd3+ > Tb3+ > Dy3+ > Ho3+), the S values increased, while the thermal conductivity (kappa) decreased particularly at temperatures above 700 K. Contrastingly, the influence of rare earth metal substitution on the electrical resistivity (rho) was small; in high temperature region the rho values increased only slightly with decreasing ionic radii of rare earth metals. High-temperature thermoelectric figure-of-merit (Z) of the samples was thereby improved by the late rare-earth metal substitution for Ca2+, particularly for those with Ho3+. A maximum Z value of the Ho-doped sample for x = 0.03 was 1.83 times 10-4 K-1 at 1100 K as compared with 0.37 times 10-4 K-1 for non-doped sample. The electronic structure of the samples was also investigated by x-ray photoemission spectroscopy (XPS) technique. The charge-transfer satellite structure of Co 2p core-level spectra was observed for the Gd-and Tb-doped samples, while the satellite is negligible for the other samples","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125400366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Characterization of oxide-incorporated n-type Mg2Si prepared by a spark plasma sintering method 火花等离子烧结法制备含氧化物n型Mg2Si的表征

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331355

T. Nemoto, M. Akasaka, T. Iida, J. Sato, K. Nishio, T. Takei, Y. Takanashi

{"title":"Characterization of oxide-incorporated n-type Mg2Si prepared by a spark plasma sintering method","authors":"T. Nemoto, M. Akasaka, T. Iida, J. Sato, K. Nishio, T. Takei, Y. Takanashi","doi":"10.1109/ICT.2006.331355","DOIUrl":"https://doi.org/10.1109/ICT.2006.331355","url":null,"abstract":"Mg2Si and Mg2Si incorporating oxides such as Al2O3, ZrO2, SnO2, ZnO, B 2O3 and CuO were formed by using a spark-plasma sintering (SPS) technique. The \"oxide-incorporated\" Mg2Si samples exhibited the formation of voids and also clusters of oxide materials. The effects of oxide incorporation into Mg2Si were investigated in an attempt to identify oxides that exhibit lower thermal conductivity but an equal power factor and figure-of-merit when compared with pure Mg2Si. In the cases of the samples of Mg2Si that incorporated SnO2, ZnO, ZrO2 and Al2O3, the observed power factors showed no significant temperature dependence, with values comparable to those observed for pure Mg2Si at about 2 times 10-5 W/cmK2. The incorporation of SnO2 or ZnO improved the lattice thermal conductivity over the whole measured temperature range when compared with a pure Mg2Si sample. The observed deviations in the values of the figures-of-merit between the SnO2 or ZnO-incorporated Mg2Si and the pure Mg2Si (without the oxide) were observed as being rather small, with no remarkable dissidence in the measured values. It was realized that the SnO2- and the ZnO-incorporated Mg2Si samples exhibited thermal conductivity values that were more than 20 % lower than that of pure Mg2Si at around 773 K","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127552898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

n-to-p Transition on K2Bi8-xSbxSe13 Series K2Bi8-xSbxSe13系列的n- p跃迁

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331383

T. Kyratsi, E. Hatzikraniotis, A. Tsiappos, K. Paraskevopoulos, M. Kanatzidis

引用次数: 0

Optimization of synthesis conditions for CoSb3 compounds prepared by Sb self-flux method Sb自通量法制备CoSb3化合物的合成条件优化

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331385

T. Souma, M. Ohtaki

引用次数: 0

High-temperature thermoelectric properties of Delafossite oxide CuRh1-xMgxO2 氧化delafosite CuRh1-xMgxO2的高温热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331289

H. Kuriyama, M. Nohara, T. Sasagawa, K. Takubo, T. Mizokawa, K. Kimura, H. Takagi

引用次数: 9

Thermoelectric Properties of Pressed Pellets and Pressureless Sintering in the K2Bi8Se13-xSx System K2Bi8Se13-xSx体系中压球团热电性能及无压烧结

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331346

A. Tsiappos, T. Kyratsi, M. Kanatzidis

引用次数: 0

Relation between zn content and thermoelectric properties of zn4+xsb3 (-0.12⩽x⩽0.12) zn含量与zn4+xsb3热电性能的关系(-0.12≤x≤0.12)

2006 25th International Conference on Thermoelectrics Pub Date : 2006-12-01 DOI: 10.1109/ICT.2006.331384

T. Souma, M. Ohtaki

引用次数: 0