czochralski -pull Ba8Ga16Ge30的高温热电性能

M. Christensen, G. J. Snyder, B. Iversen
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引用次数: 4

摘要

研究了一种Czochralski晶体的高温热电性能。在273K到1150K的温度范围内获得了完整的输运性质。即使经过热循环,其物理性质仍可重现。Seebeck系数显示样品为n型导体,在1073K时最大值为-148 muV/K。电阻率表现出重掺杂半导体的特性,在1073 K时达到最大值,为1.7 ω -cm。热导率在900K左右最小为1.25 W/m-K, ZT在1000k时最大为0.9
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High temperature thermoelectric properties of Czochralski-pulled Ba8Ga16Ge30
High temperature thermoelectric properties have been measured on a Czochralski pulled Ba8Ga16Ge30 crystal. Complete transport properties obtained in the temperature range from 273K to 1150K. The physical properties are reproducible even after thermal cycling. The Seebeck coefficient reveals the sample to be an n-type conductor with a maximum value of -148 muV/K at 1073K. The electrical resistivity shows the characteristics of a heavily doped semi conductor, and it goes through a maximum at 1073 K with a value of 1.7 mOmega-cm. The thermal conductivity goes through a minimum of 1.25 W/m-K around 900K, and ZT reaches a maximum of 0.9 at 1000 K
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