2006 25th International Conference on Thermoelectrics最新文献_第10页

Investigation of the Magnesium Silicide -- Mg2Si Films 硅化镁—Mg2Si薄膜的研究

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331316

T. Kamilov, D.K. Kabilov, R.Kh. Kamilova, M.E. Azimov, V. Klechkovskaya, A. Orekhov, E. Suvorova

引用次数: 1

Fine Bi2Te3 wires fabricated by glass sealed melt spinning 用玻璃密封熔融纺丝制备Bi2Te3细丝

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331361

Ichiro Shiota, H. Kohri, Munehiro Kato, I. J. Ohsugi

引用次数: 4

Thermoelectric Properties of P-type Half-Heusler Compounds HfPtSn and ZrPtSn p型半heusler化合物HfPtSn和ZrPtSn的热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331294

Y. Kimura, A. Zama, Y. Mishima

{"title":"Thermoelectric Properties of P-type Half-Heusler Compounds HfPtSn and ZrPtSn","authors":"Y. Kimura, A. Zama, Y. Mishima","doi":"10.1109/ICT.2006.331294","DOIUrl":"https://doi.org/10.1109/ICT.2006.331294","url":null,"abstract":"We focused on half-Heusler compounds MPtSn, where M is Hf, Zr and Ti, to seek for half-Heusler compounds which intrinsically show excellent p-type thermoelectric properties in a wide temperature range up to around 1000 K. Nearly single-phase MPtSn alloys were fabricated by directional solidification using optical floating zone melting method to evaluate thermoelectric properties as properly as possible. We have found that HfPtSn and ZrPtSn show p-type thermoelectric properties in a measured temperature range from 300 to 1100 K as it is expected from our previous work. It is interesting that HfNiSn and ZrNiSn with the same valence electrons count of 18 are well-known to show n-type thermolectric properties. HfPtSn shows quite high values of p-type thermoelectric power around 250 muV/K in low and intermediate temperature ranges, while ZrPtSn shows much smaller maximum value of about 70 muV/K. On the other hand, TiPtSn exhibits very large n-type thermoelectric power of around 500 muV/K at ambient temperatures though it decreases drastically at elevated temperatures. High electrical resistivity is a major drawback that all three MPtSn compounds have in common. HfPtSn has the lowest thermal conductivity among MPtSn though the values are relatively high. The lattice contribution is supposed to dominates the thermal conduction because of high electrical resistivity and low carrier concentration measured as 2.17 times 1025 m-3","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122055339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Effective Electron Mass of ordered AgPbmSbTe2+m clarified by ab-initio calculations 用从头算法澄清了有序AgPbmSbTe2+m的有效电子质量

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331352

W. Wunderlich

引用次数: 0

Effects of oxide additive on thermoelectricity of FeSi2 氧化物添加剂对FeSi2热电性能的影响

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331240

S. Sugihara, K. Morikawa, Y. Igarashi, K. Nishiyama

引用次数: 0

Thermoelectric properties on n-type Si80Ge20 with different Dopants 不同掺杂剂对n型Si80Ge20热电性能的影响

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331367

Guiying Xu, Huawei Jiang, Chunyan Zhang, Xiaofeng Wu, Sitong Niu

引用次数: 2

Development of flexible thermoelectric device: Improvement of device performance 柔性热电器件的发展:器件性能的提高

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331376

Y. Iwasaki, M. Takeda

{"title":"Development of flexible thermoelectric device: Improvement of device performance","authors":"Y. Iwasaki, M. Takeda","doi":"10.1109/ICT.2006.331376","DOIUrl":"https://doi.org/10.1109/ICT.2006.331376","url":null,"abstract":"Thermoelectric (TE) device has some problems, such as low mechanical strength, high manufacturing cost, etc. We are developing flexible TE device using thin films and flexible substrates in order to overcome those problems. The purpose of this work is to fabricate and evaluate the flexible TE device. A flexible TE device consists of vapor-deposited thin films of n- and p-type TE materials between two flexible substrates. The flexible substrate is made up of a combination of polyimide and copper. This structure enables the device itself to convert temperature difference of outer surfaces (DeltaTout) into in-plane temperature difference (DeltaT in), and it can generate electricity by the p-n couples. We analyzed temperature distribution of the device by the finite element method (FEM). According to the analysis, a flexible substrate which has thinner polyimide layer (h1) and thicker copper layer (h1) is preferable to obtain larger temperature difference. We fabricated flexible TE devices containing 33 pairs of p-n couple, which is composed of chromel and constantan thin films. The device of h 1/h2 = 12 mum/70 mum generated 3.72 muW at DeltaTout = 22.7 K, while 2.40 muW was generated from the device of h1/h2 = 35 mum/25 mum at DeltaT out = 24.0 K. The performance of the flexible TE device was successfully improved as predicted by the analysis","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128877219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Synthesis and Characterization of nanoscale Bi2Te3, Sb2Te3, PbTe and Ag2Te powders: activated Metals and soluble Tellurium sources as synthetic Tools 纳米Bi2Te3、Sb2Te3、PbTe和Ag2Te粉体的合成与表征:活性金属和可溶性碲源作为合成工具

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331224

S. Schlecht, M. Yosef, S. Weimer

{"title":"Synthesis and Characterization of nanoscale Bi2Te3, Sb2Te3, PbTe and Ag2Te powders: activated Metals and soluble Tellurium sources as synthetic Tools","authors":"S. Schlecht, M. Yosef, S. Weimer","doi":"10.1109/ICT.2006.331224","DOIUrl":"https://doi.org/10.1109/ICT.2006.331224","url":null,"abstract":"Binary tellurides such as PbTe or Bi2Te3 represent one of the fundamental classes of thermoelectrics. Thus, the development of new routes for the preparation of these compounds as nanoscale powders is an important challenge. In this context, we investigated the use of activated metals and soluble tellurium sources such as diphenyltelluride or the tellurolates of hard transition metal cations as versatile tool box system for the synthesis of these powders. Using solvochemically activated lead, bismuth or antimony, their respective tellurides PbTe, Bi2Te3 and Sb2 Te3 could be obtained in a reaction with Ph2Te2 following the same experimental protocol in all cases. The preparation of an Ag2Te nanopowder required a different synthetic approach as elemental silver does not react with Ph 2Te2. Following the principle of hard and soft acids and bases, silver acetate and zinc tellurolate Zn(TePh)2middotTMEDA [Jun, Y, 2001] were reacted to form nanoparticles of Ag2Te from intermediately formed silver tellurolate","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128944019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of the Yb substitutions on the thermoelectric properties of CaMnO3 Yb取代对CaMnO3热电性能的影响

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331291

D. Flahaut, R. Funahashi, K. Lee, H. Ohta, K. Koumoto

引用次数: 8

A new concept of reducing nitrogen oxides emissions in a combustion engine -- combination of ceramic oxygen conductors and thermoelectric materials 减少内燃机中氮氧化物排放的新概念——陶瓷氧导体和热电材料的结合

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331239

K. Wojciechowski, M. Bučko, J. Obła̧kowski, P. Fuć, J. Merkisz

引用次数: 1