Thermoelectric properties on n-type Si80Ge20 with different Dopants

Abstract

Si_xGe_1-x is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si₈₀Ge₂₀ alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si₈₀Ge₂₀ respectively by Seebeck coefficient of n type Si₈₀Ge₂₀ at same time