Investigation of the Magnesium Silicide -- Mg2Si Films

T. Kamilov, D.K. Kabilov, R.Kh. Kamilova, M.E. Azimov, V. Klechkovskaya, A. Orekhov, E. Suvorova
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引用次数: 1

Abstract

The silicides are ecologically friendly materials and they have a mechanical stability to corrosion, oxidation, decay and aggressive environments. It is known that a bulk magnesium silicide - Mg2Si demonstrates semiconductor conductivity n-type character with energy band gap Eg=0.78 eV and solid solution based on the Mg2Si-Mg2Sn have figure of merit of ZT>1 [Samsonov, et. al. 1979]. Only small part of articles has devoted to thin Mg2Si films on silicon. In this work the magnesium silicide films have been grown on silicon substrate by reactive diffusion method and their thermoelectric properties were investigated
硅化镁—Mg2Si薄膜的研究
硅化物是一种生态友好的材料,它们对腐蚀、氧化、腐烂和侵蚀环境具有机械稳定性。已知块状硅化镁- Mg2Si具有半导体导电性n型特征,能带隙Eg=0.78 eV,基于Mg2Si- mg2sn的固溶体的优点系数ZT>1 [Samsonov, et. al. 1979]。只有一小部分的文章专门研究了硅上的Mg2Si薄膜。本文采用反应扩散法在硅衬底上生长硅化镁薄膜,并对其热电性能进行了研究
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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