Si-Ge-Au非晶薄膜作为非制冷型光传感器的光热电效应研究

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI:10.1109/ICT.2006.331306

Y. Okamoto, K. Fukui, K. Fujii, T. Suenaga, J. Morimoto

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摘要

我们研究了Si-Ge-Au非晶薄膜用于光传感器的可行性。明确了光传感器应用的最佳样品制备条件。测定了最佳制备样品的光敏性能。结果表明，该材料的比灵敏度可达0.019 V/W。这一数值意味着Si-Ge-Au非晶薄膜是光热电型光传感器主要材料的有力候选

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The study for photo-thermoelectric effect of Si-Ge-Au amorphous thin films as non-cooled type photo sensor

We have examined the feasibility for photo sensor application of Si-Ge-Au amorphous thin films. It is clarified the optimum sample preparation condition for photo sensor application. Photo sensing properties of optimum prepared samples were measured. As a result, specific sensitivity reached up to 0.019 V/W as row material. This value means that Si-Ge-Au amorphous thin film is powerful candidate for primary material of photo-thermoelectric type photo sensor

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2006 25th International Conference on Thermoelectrics

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