双微线阵列中性能图的增强

H. Iwasaki, H. Morita, D. Chikamori, M. Koyano, Y. Hasegawa
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引用次数: 1

摘要

采用改进的Harman方法在双微线阵列上测量了ZT的性能,微线的直径从6微米变为50微米。ZT值在几个阵列中分布广泛,与散装样品相反。在被测阵列中,微丝直径与ZT之间没有明显的相关性。在50 mumPhi双微细线阵列中获得了0.287的较大ZT,是多晶体材料的2.6倍。Seebeck系数绝对值α随ZT的增大而增大,导热系数kappa随ZT的增大而减小。塞贝克系数和导热系数与ZT的关系与先前报道的铋单晶相似。结果表明,ZT的大幅提高是由于构成阵列的双微线的晶体取向均匀。所得结果对开发具有更高能量转换效率的热电器件具有重要意义。文中还强调了利用珀尔帖热的哈曼方法在微观热电系统的研究中是非常合适的
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancement of the Figure of Merit in Bi-microwire Arrays
Figures of merit, ZT have been measured by the improved Harman method on Bi-microwire arrays, where the diameter of the microwire is changed from 6 mum to 50 mum. The ZT values are widely distributed among the several arrays, on the contrary to those for the bulk samples. Clear correlation between the microwire diameters and ZT cannot be seen among the measured arrays. Quite large ZT of 0.287 was obtained in the 50 mumPhi Bi-microwire array and was 2.6 times larger than that in the polycrystalline bulk material. Absolute value of the Seebeck coefficient, alpha increases with increasing ZT and the thermal conductivity, kappa decreases with ZT. The relationship of the Seebeck coefficient and the thermal conductivity with ZT shows similar behavior to those in bismuth single crystals reported previously. It is concluded that the large improvement of ZT is due to the homogeneous crystal orientation in Bi-microwires constituting the array. The obtained results are important in the development of the thermoelectric devices with much higher energy conversion efficiency. It is also emphasized that the Harman method, in which the Peltier heat is utilized, is very appropriate in the study of the microscopic thermoelectric system
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