RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics最新文献_第9页

Quantitative measurement of sugar concentration using in house fabricated microgap biosensor 自制微间隙生物传感器对糖浓度的定量测定

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706471

B. S. Rao, M. Nurfaiz, U. Hashim

{"title":"Quantitative measurement of sugar concentration using in house fabricated microgap biosensor","authors":"B. S. Rao, M. Nurfaiz, U. Hashim","doi":"10.1109/RSM.2013.6706471","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706471","url":null,"abstract":"Sugar is carbohydrate sweet-flavoured substance that composed of carbon, oxygen and hydrogen. It is an important component to provide sweet taste in food. Besides, it also provides immediate energy to complete daily routine life. However, uncontrolled amount of sugar can lead to serious health complications and diseases such as Hypoglycemia (low sugar in blood), syndrome X, diabetes and heart disease. Low amount of sugar in bloodstream may cause nausea and dizziness. Besides that, it also can be used as sensor to detect the amount of sugar in beverages. Here, sugar is used as a reference measurement to test the functionality of the device before testing it in real life using glucose samples. In future, real urine samples will be used to measure concentration of glucose in diabetic patients. In this paper, sugar concentration measurement based on microgap biosensor is fabricated by using conventional photolithography process. Silicon was used as the substrate material and followed by layers of Silicon dioxide (SiO2), Polysilicon, Titanium (Ti) and Gold (Au). Chrome mask were used to transfer pattern of microgap and contact pads onto the silicon substrate. The device design has been optimised to achieve few performance factors that includes accuracy, sensitivity, response time and fabrication cost. A number of sugar concentrations were prepared by diluting it with DI water for measurement process by electrical characterization. In this work, studies and analysis were conducted based on different concentration of sugar on constant sized microgap and based on different size of microgap structure on constant sugar concentration. As the result, the experiment has been successfully yielded a high sensitive microgap sensor and the lowest detected sugar concentration sample is 0.0245gml-1. This method of biosensing provides a very simple and promising detection technique for any kind of biomolecules that includes proteins, DNA, enzymes, antibody and antigen.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132857065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Numerical study of side gate junction-less transistor in on state 边栅无结晶体管导通状态的数值研究

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706575

A. Dehzangi, F. Larki, B. Majlis, M. Hamidon, M. Navasery, E. Gharibshahi, N. Khalilzadeh, M. Vakilian, E. Saion

引用次数: 0

Memristor based delay element using current starved inverter 基于忆阻器的电流饥渴型逆变器延时元件

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706478

Siti Musliha Ajmal Binti Mokhtar, W. Abdullah

{"title":"Memristor based delay element using current starved inverter","authors":"Siti Musliha Ajmal Binti Mokhtar, W. Abdullah","doi":"10.1109/RSM.2013.6706478","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706478","url":null,"abstract":"This paper will first review on some applications of newly found passive element, the memristor. Utilizing the beneficial characteristic of memristor where it can remember its last state, more and more improvements on today electronic designs has been proposed. However, it is crucial to observe the behavior of memristor model before applying into circuits, especially when the memristor is coupled with other devices. In this paper, LTspice memristor model is used to simulate memristor behavior and applied to the basic delay element circuit. The circuit used a tristate inverter as the delay element. It controls the current flowing to the parasitic capacitor, thus controlling the delay. The compatibility of memristor with the delay element is also in consideration to ensure the functionality of the circuits. At the end, a basic delay element using inverter and memristor is presented. This paper is divided into 4 sections, including the introduction where few examples of memristor applications are explained. It follows by next section where the inverter delay characteristic is narrated. Section 3 is about a mathematical model of memristor that been used to provide a specific memristor resistance in order to get certain delay value during simulation. Using LT spice, a memristor based delay circuit design is then proposed and the delay is observed by circuit simulation. In conclusion, the calculated R and delay value is then compared to the simulation result in order to verify circuit functionality.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"325 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123506653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Investigating the annealing effect on the conventional growth of ZnO nanorod through electrical characterization 通过电学表征研究了退火对ZnO纳米棒常规生长的影响

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706536

R. Prasad, U. Hashim, K. L. Foo, M. Shafiq

{"title":"Investigating the annealing effect on the conventional growth of ZnO nanorod through electrical characterization","authors":"R. Prasad, U. Hashim, K. L. Foo, M. Shafiq","doi":"10.1109/RSM.2013.6706536","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706536","url":null,"abstract":"Zinc oxide nanorods was synthesized by using hydrothermal growth due to simplicity and involve low temperature processing that is 930C. Low temperature processing is very essential for ZnO nanorod synthesis because defect on developing nano-device can be avoided. Development of nano-device with minimal defect is essential to ensure that the performances of the nano device is optimum for sensing bio-molecular substances. Zinc oxide has become the most remarkable choice among other metal oxides semiconductor due to many criteria such as economical cost, unique physical and electrical properties and biocompatible. Initially, ZnO thin films was prepared by using sol gel method. The ZnO seed solution was prepared using conventional sol-gel route. Zinc oxide solution was prepared in two different solvents which are isopropanol (IPA) and methanol (MeOH) in order to investigate the influence of solvent to the quality of ZnO nanorods. MEA, the sol stabilizer was added to the solution for the following 2 hours. Aluminum IDE electrode was deposited on the silicon wafer sample <;100> using traditional wet etching method. Positive photoresist (PR) was coated on the silicon wafer and followed with soft back for 90 seconds. IDE pattern transfer was done by exposing UV light (365nm) onto the PR for 10 seconds. After that, developing and etching process occurred for pattern transfer the IDE electrode onto the silicon wafer. The prepared seed solution was coated on silicon wafer by using speed coating method. Some of the coated samples underwent annealing process at temperature 2000C for 2 hours. The annealed and non-annealed sample undergoes hydrothermal growth method to synthesize ZnO nanorods. The synthesized nanorods underwent I-V test and capacitances to investigate the electrical behavior of ZnO nanorods. The annealed ZnO nanorods provided higher current, which was 900μA, as compared the non-annealed ZnO nanorods which was only 55 μA.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115879992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design and optimization of magnetic particles embedded in PDMS membrane PDMS膜中磁性微粒的设计与优化

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706463

M. Said, J. Yunas, B. Majlis, B. Bais, A. A. Hamzah

引用次数: 4

Spherical to polyhedral Pt nanocrystal formation assisted with methylamine 甲胺辅助形成球形到多面体的铂纳米晶体

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706542

M. Ooi, A. Aziz

引用次数: 1

Effect of annealing temperature on electrical and optical properties of ZnO thin films prepared by sol gel method 退火温度对溶胶-凝胶法制备ZnO薄膜电学和光学性能的影响

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706515

M. Hannas, A. Manut, Nurul Hafizah A. Rahman, A. B. Rosli, M. Rusop

{"title":"Effect of annealing temperature on electrical and optical properties of ZnO thin films prepared by sol gel method","authors":"M. Hannas, A. Manut, Nurul Hafizah A. Rahman, A. B. Rosli, M. Rusop","doi":"10.1109/RSM.2013.6706515","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706515","url":null,"abstract":"In this work, ZnO thin films were deposited on glass substrates using spin coating method. Different annealing temperature from 400 to 550°C significantly distresses the nature of electrical and optical properties of ZnO thin films have been investigated. The effect of annealing temperature on optical and electrical properties of nanostuctured ZnO thin films deposited by spin coating method has been studied. The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. The electrical properties were analyzed using I-V measurement (CEP 2000). Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The optical transmittance spectrums showed the average transmittance of ZnO thin film with different annealing temperature higher than 90% in visible wavelength region. The optical band properties of the nanostructured ZnO thin films were analyzed by UV Vis and Tauc method was accepted to estimate the optical gap and absorption coefficient. The resistivity of the film decreased as the annealing temperature increased from 400 to 550oC. The highest conductivity values of ZnO thin film was obtained at 500°C with value 0.000197 Scm-1. Moreover, the higher porosity was found at 400oC with value 57.5%. The higher porosity of ZnO thin film can be expected the high sensitivity for gas sensor due to the material has a comparatively large surface area.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Fabrication of multi-walled carbon nanotubes hydrogen sensor on plastic 塑料上多壁碳纳米管氢传感器的制备

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706539

M. M. Ramli, S. S. Isa, S. Henley

引用次数: 3

Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor MEMS电容式压力传感器硅片上SiC/SiN层直接键合的表征

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706470

Noraini Marsi, B. Majlis, A. A. Hamzah, Faisal Mohd Yasin

引用次数: 1

High frequency small signal modeling of CNTFET CNTFET高频小信号建模

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI: 10.1109/RSM.2013.6706547

S. Farhana, A. Alam, Sheroz Khan

引用次数: 6