High frequency small signal modeling of CNTFET

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI:10.1109/RSM.2013.6706547

S. Farhana, A. Alam, Sheroz Khan

引用次数: 6

Abstract

In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.

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CNTFET高频小信号建模

本文描述了CNTFET小信号模型的发展。CNTFET的发展包括高频响应。CNTFET产生比传统的Si MOSFET更高的输出。建立了一种用于增强模式碳纳米管晶体管的SPICE模型。通过对CNTFET的性能分析，得出了理想的10thz频率下1.8 mS的性能参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

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