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Numerical Modeling of Native Defects in CVD Grown Diamond Photodetectors CVD生长金刚石光电探测器中固有缺陷的数值模拟
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770414
S. Mohapatra, P. Sahu, N. Murty
{"title":"Numerical Modeling of Native Defects in CVD Grown Diamond Photodetectors","authors":"S. Mohapatra, P. Sahu, N. Murty","doi":"10.1109/EDKCON.2018.8770414","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770414","url":null,"abstract":"Diamond based photoconductors intended for use as radiation detectors are simulated in this work in SYNOPSYS© Sentaurus TCAD. Simulations are carried out by including the model of native defects for single-crystal and poly-crystal diamond detectors grown by CVD process. The models are validated by comparing the simulations with the reported experimental data. The explanation of the results in terms of the diamond band-gap and the comparative analysis of the dark currents of both the detectors have also been presented. The temperature dependant simulation is also presented to substantiate the developed model at high temperature.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116724821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Flyback Converter by Using an Ideal Switch and a MOSFET Switch 用理想开关和MOSFET开关设计反激变换器
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770407
G. Das, M. De, K. Mandal
{"title":"Design of Flyback Converter by Using an Ideal Switch and a MOSFET Switch","authors":"G. Das, M. De, K. Mandal","doi":"10.1109/EDKCON.2018.8770407","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770407","url":null,"abstract":"The Flyback Converters have become one of the most popular used buck-boost topology because of their simple design and working efficiency. In this paper, the dynamic models of the flyback converter using two different switches have been compared. One using an ideal switch and other using a MOSFET switch. These models have respective advantages for example single switching, coupled inductor, output filter (capacitive), isolation and operating of these models at a particular value of frequency in a traditional PWM scheme. In the MOSFET Switch Flyback converter the PWM percentage period of Input Output can be increase or decrease. To access apparent parameters, a model is simulated to find the transformer parameters, capacitive parameters, frequency of operation. A simulation model for this purpose in MATLAB/SIMULINK has been devised and then affirmed by running this model on the simulation platform. Also to find its various performance matrices with their verification.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Performance Assessment of a Double Gate Work Function Engineered Doped Tunnel FET Based on 2D Surface Potential Model 基于二维表面电位模型的双栅功函数工程掺杂隧道场效应管性能评估
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770436
R. Bose, J. N. Roy
{"title":"Performance Assessment of a Double Gate Work Function Engineered Doped Tunnel FET Based on 2D Surface Potential Model","authors":"R. Bose, J. N. Roy","doi":"10.1109/EDKCON.2018.8770436","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770436","url":null,"abstract":"Two dimensional surface potential model of a work function engineered (WFE) doped double gate (DG) Tunnel Field Effect Transistor (TFET) structure is proposed and verified using TCAD Sentaurus device simulation. The overall electric field is estimated using the proposed model based on which device performance is analyzed. The proposed model is completely physics based and analytic and does not include any fitting parameters or iterative calculation. The proposed TFET structure employs gate which is made of two metals having different thicknesses and work functions acting as tunneling gate and control gate. Such configuration creates a n+ pocket enhancing carrier tunneling probability near source/channel junction. A comparative performance analysis is also performed between our proposed device and its normal double Gate (DG) counterpart.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116541587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Channel Dimensions on Transfer Characteristics of Graphene FET 沟道尺寸对石墨烯场效应管转移特性的影响
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770440
Sriyanka Behera, S. R. Pattanaik, G. Dash
{"title":"Effect of Channel Dimensions on Transfer Characteristics of Graphene FET","authors":"Sriyanka Behera, S. R. Pattanaik, G. Dash","doi":"10.1109/EDKCON.2018.8770440","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770440","url":null,"abstract":"Graphene-based field-effect transistors (FETs)have received widespread attention as an alternative for conventional silicon devices. The purpose of this paper is to present a new simulation scheme for the I-V characteristics of graphene based FETs. Using the same, we studied the channel length and width dependence behaviour of the transfer characteristics of graphene based FETs (GFETs)with various channel lengths from 0.75 μm to 1.25 μm and widths from 1.75 μm to 2.25 μm, From our study, we observed that, the Dirac point is independent of the channel length and width for the range of values considered. However, the magnitude of the current progressively increases with increase in width of the channel.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127138804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Hybrid Atomistic - Semi-Analytical Modeling on Schottky Barrier Au-MoS2-Au MOSFETs 肖特基势垒Au-MoS2-Au mosfet的混合原子-半解析模型
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770224
A. Mukhopadhyay, S. Bhattacharya, P. Gupta, L. Banerjee, A. Sengupta, H. Rahaman
{"title":"A Hybrid Atomistic - Semi-Analytical Modeling on Schottky Barrier Au-MoS2-Au MOSFETs","authors":"A. Mukhopadhyay, S. Bhattacharya, P. Gupta, L. Banerjee, A. Sengupta, H. Rahaman","doi":"10.1109/EDKCON.2018.8770224","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770224","url":null,"abstract":"In this work, we investigate the layer dependency of Mos2channel material based Double Gate Schottky barrier MOSFET. In order to evaluate the transport properties due to this effect accurately, we have calculated the electronic properties of multilayer Mos2using density functional theory and incorporated those parameters in our analytical model for double Gate Schottky barrier MOSFET. A full description of the electron transport due to tunneling through the Schottky barrier and thermionic emission of electrons is computed in our model. Our results demonstrate that monolayer Mos2shows good device characteristics for logic applications, with ON/OFF ratio $sim 10^{7}$. As far as the layer dependency is concerned, more than two times higher drain current is achievable for the device made of the monolayer based channel than that of the five-layer based channel of Mos2. In Mos2, drive current, transconductance significantly reduced with increasing number of layer. The results obtained with our model concur with experimental reports.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127044932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Automation of 14.5 GHz ECR Ion Source and Injection Line Distributed Vacuum System for Room Temperature Cyclotron 室温回旋加速器14.5 GHz ECR离子源及注入线分布式真空系统的自动化
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770481
Suman Kumar Guha, P. Y. Nabhiraj, S. Chattopadhyay, Ritam Bera, P. Dhara
{"title":"Automation of 14.5 GHz ECR Ion Source and Injection Line Distributed Vacuum System for Room Temperature Cyclotron","authors":"Suman Kumar Guha, P. Y. Nabhiraj, S. Chattopadhyay, Ritam Bera, P. Dhara","doi":"10.1109/EDKCON.2018.8770481","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770481","url":null,"abstract":"As a part of heavy ion acceleration program using K-130 cyclotron, the 14.5 GHz ECR ion source and an injection line is commissioned recently in Variable Energy Cyclotron Centre Kolkata. The ECR ion source and the beam transport system have been developed indigenously. The 14.5 GHz ECR ion source produces multiple charged heavy ions which are transported from ECR source to cyclotron beam chamber through the injection line. The ECR source along with the injection line uses four turbo pumping modules, one cryo module and three line valves to achieve vacuum of the order of 1× 10−7 mbar or better for ion beam transportation. The operation of the entire distributed vacuum system is controlled by an Arduino based distributed system designed and developed for facilitating systematic start up and shutdown of the entire vacuum system with a single button operation from the PC. Main interlocks are given to the operation of Isolation gate valve between the beam chamber and vertical injection line and with the operation of Inflector Power supply. These interlocks are designed according to the Atomic Energy Regulatory Board (AERB) safety norms for the Cyclotron and save the system from irrelevant manual operation along with any other unanticipated failure. A single supervisory program interfaces with the user by running a webserver program and communicates over existing control LAN of the ECR ion source.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130462037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On Some Analysis of Optical Microring Resonator to the Generation of Microwave Signal 光微环谐振器对微波信号产生的一些分析
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770469
Shuvajit Roy, A. Das Barman
{"title":"On Some Analysis of Optical Microring Resonator to the Generation of Microwave Signal","authors":"Shuvajit Roy, A. Das Barman","doi":"10.1109/EDKCON.2018.8770469","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770469","url":null,"abstract":"A novel application to the generation of microwave signal has been reported in this paper, where the role of microring is to pass the desired sidebands to the drop, i.e. a notch filter, whereas the architectural modifications has been done to increase the tunability range, with validation of the presented simulation results.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123660715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical Analysis of Graphene Oxide and Reduced Graphene Oxide for Super Capacitor Applications 氧化石墨烯及还原氧化石墨烯在超级电容器中的电化学分析
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770433
S. Rai, R. Bhujel, B. Swain
{"title":"Electrochemical Analysis of Graphene Oxide and Reduced Graphene Oxide for Super Capacitor Applications","authors":"S. Rai, R. Bhujel, B. Swain","doi":"10.1109/EDKCON.2018.8770433","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770433","url":null,"abstract":"Graphene Oxide (GO) was successfully synthesized by following the Hummer's method and was reduced to form reduced Graphene Oxide (rGO) by using Zn metal powder. The AFM image showed smooth surface for both GO and rGO, indicating the formation of GO sheets. The reduction in lattice spacing from 0.85 to 0.36 nm in rGO is caused by the removal of the oxygen-containing functional groups bonded on the surface of the graphene layers. The defect density as well as the number of stacking in rGO is reduced as compared to GO indicated by the reduction of both ID/IG and I2D/IGratio. As shown by the CV measurement the integrated area under the CV curve was increased with a rectangular shape for rGO and hence obtained better capacitance than GO. Hence, rGO has a better super capacitor property than GO. The impedance spectroscopy showed that the value of $mathrm{R}_{text{CT}}$ is 21.84 and 30.54 ohm for rGO and GO respectively, indicating an increase in the charge transfer resistance for GO, and hence increased charge conductivity for rGO.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123826642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design and Analysis of Distributed MEMS Transmission Line (DMTL) based Tunable Band Pass Filter 基于分布式MEMS传输线(DMTL)的可调谐带通滤波器设计与分析
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770445
K. Srinivasa Rao, G. V. Ganesh, K. Girija Sravani
{"title":"Design and Analysis of Distributed MEMS Transmission Line (DMTL) based Tunable Band Pass Filter","authors":"K. Srinivasa Rao, G. V. Ganesh, K. Girija Sravani","doi":"10.1109/EDKCON.2018.8770445","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770445","url":null,"abstract":"In this paper, we have designed a Distributed MEMS Transmission line (DMTL) based Tunable Band Pass Filter. DMTL is a coplanar waveguide (CPW) periodically loaded with continuously-variable MEMS capacitors. We have proposed two types of switches i.e. fixed-fixed type and cantilever type which are designed by FEM Tool. We have optimized the RF MEMS Switches and each switch is simulated. Fixed-fixed switch has the Spring constant of 26.73 N/m, pull-in voltage of 15V, switching time of. 38ns, up and down state capacitances of 0.142 pf,4.05 pF, return losses is in the range of -.005 to −.035dB, and insertion losses is in the range of −11 to −24dB. Series cantilever switch has the spring constant of 6.42 N/m, pull-in voltage of 26V, switching time of 110μs, up and down state capacitances of. 02 fF,.24 pF, return losses is in the range of −.007 to −.011dB, and insertion losses in the range of −5 to −70dB. The electromagnetic simulation of the filter has been carried out with the help of HFSS without switch, the center frequency is obtained at 1GHz, and an insertion loss of nearly −5dB. When these switches are integrating with CPW transmission line to get tuning of both the center frequency and bandwidth, the filter operates at the UHF and L band (frequency range of. 1-3GHz). Within the tuning range the filter has the insertion loss of less than 5dB which is always required.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"3 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121016089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure 子带间相互作用对非对称AlGaAs抛物双量子阱结构中非线性电子迁移率的影响
2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770423
N. Sahoo, S. Palo, A. K. Panda, T. Sahu
{"title":"Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure","authors":"N. Sahoo, S. Palo, A. K. Panda, T. Sahu","doi":"10.1109/EDKCON.2018.8770423","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770423","url":null,"abstract":"We study the effect of inter-subband interaction on nonlinear electron mobility <tex>$mu$</tex> in asymmetric <tex>$AlGaAs$</tex> parabolic double quantum well structure. We take into account the ionized impurity <tex>$(imp-)$</tex> and alloy disorder <tex>$(al-)$</tex> scatterings for calculation of <tex>$mu$</tex>. We keep well width <tex>$w2$</tex> towards the surface side fixed and vary <tex>$mu$</tex> with well width <tex>$w1$</tex> along the substrate. The mobility <tex>$mu$</tex> enhances with <tex>$w1$</tex>. As <tex>$w1$</tex> increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of <tex>$mu$</tex> as a function of <tex>$w1$</tex>. This is due to the cusp like the fluctuation of <tex>$imp-$</tex> and <tex>$al-$</tex> intersubband scattering rate matrix elements.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128401068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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