Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure

N. Sahoo, S. Palo, A. K. Panda, T. Sahu
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Abstract

We study the effect of inter-subband interaction on nonlinear electron mobility $\mu$ in asymmetric $AlGaAs$ parabolic double quantum well structure. We take into account the ionized impurity $(imp-)$ and alloy disorder $(al-)$ scatterings for calculation of $\mu$. We keep well width $w2$ towards the surface side fixed and vary $\mu$ with well width $w1$ along the substrate. The mobility $\mu$ enhances with $w1$. As $w1$ increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of $\mu$ as a function of $w1$. This is due to the cusp like the fluctuation of $imp-$ and $al-$ intersubband scattering rate matrix elements.
子带间相互作用对非对称AlGaAs抛物双量子阱结构中非线性电子迁移率的影响
研究了非对称AlGaAs抛物型双量子阱结构中子带间相互作用对非线性电子迁移率的影响。在计算$\mu$时,我们考虑了电离杂质$(imp-)$和合金无序$(al-)$的散射。我们保持井宽$w2$朝向表面侧固定,并随井宽$w1$沿衬底变化$\mu$。迁移率$\mu$随$w1$而增强。随着$w1$的增加,所占用的子带数量发生变化,即单带、双带和再次单带。当双子带占据时,子带间相互作用引起$\mu$作为$w1$的函数的非线性行为。这是由于$imp-$和$al-$子带间散射率矩阵元素的尖峰波动所致。
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