{"title":"Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure","authors":"N. Sahoo, S. Palo, A. K. Panda, T. Sahu","doi":"10.1109/EDKCON.2018.8770423","DOIUrl":null,"url":null,"abstract":"We study the effect of inter-subband interaction on nonlinear electron mobility <tex>$\\mu$</tex> in asymmetric <tex>$AlGaAs$</tex> parabolic double quantum well structure. We take into account the ionized impurity <tex>$(imp-)$</tex> and alloy disorder <tex>$(al-)$</tex> scatterings for calculation of <tex>$\\mu$</tex>. We keep well width <tex>$w2$</tex> towards the surface side fixed and vary <tex>$\\mu$</tex> with well width <tex>$w1$</tex> along the substrate. The mobility <tex>$\\mu$</tex> enhances with <tex>$w1$</tex>. As <tex>$w1$</tex> increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of <tex>$\\mu$</tex> as a function of <tex>$w1$</tex>. This is due to the cusp like the fluctuation of <tex>$imp-$</tex> and <tex>$al-$</tex> intersubband scattering rate matrix elements.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We study the effect of inter-subband interaction on nonlinear electron mobility $\mu$ in asymmetric $AlGaAs$ parabolic double quantum well structure. We take into account the ionized impurity $(imp-)$ and alloy disorder $(al-)$ scatterings for calculation of $\mu$. We keep well width $w2$ towards the surface side fixed and vary $\mu$ with well width $w1$ along the substrate. The mobility $\mu$ enhances with $w1$. As $w1$ increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of $\mu$ as a function of $w1$. This is due to the cusp like the fluctuation of $imp-$ and $al-$ intersubband scattering rate matrix elements.