{"title":"子带间相互作用对非对称AlGaAs抛物双量子阱结构中非线性电子迁移率的影响","authors":"N. Sahoo, S. Palo, A. K. Panda, T. Sahu","doi":"10.1109/EDKCON.2018.8770423","DOIUrl":null,"url":null,"abstract":"We study the effect of inter-subband interaction on nonlinear electron mobility <tex>$\\mu$</tex> in asymmetric <tex>$AlGaAs$</tex> parabolic double quantum well structure. We take into account the ionized impurity <tex>$(imp-)$</tex> and alloy disorder <tex>$(al-)$</tex> scatterings for calculation of <tex>$\\mu$</tex>. We keep well width <tex>$w2$</tex> towards the surface side fixed and vary <tex>$\\mu$</tex> with well width <tex>$w1$</tex> along the substrate. The mobility <tex>$\\mu$</tex> enhances with <tex>$w1$</tex>. As <tex>$w1$</tex> increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of <tex>$\\mu$</tex> as a function of <tex>$w1$</tex>. This is due to the cusp like the fluctuation of <tex>$imp-$</tex> and <tex>$al-$</tex> intersubband scattering rate matrix elements.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure\",\"authors\":\"N. Sahoo, S. Palo, A. K. Panda, T. Sahu\",\"doi\":\"10.1109/EDKCON.2018.8770423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the effect of inter-subband interaction on nonlinear electron mobility <tex>$\\\\mu$</tex> in asymmetric <tex>$AlGaAs$</tex> parabolic double quantum well structure. We take into account the ionized impurity <tex>$(imp-)$</tex> and alloy disorder <tex>$(al-)$</tex> scatterings for calculation of <tex>$\\\\mu$</tex>. We keep well width <tex>$w2$</tex> towards the surface side fixed and vary <tex>$\\\\mu$</tex> with well width <tex>$w1$</tex> along the substrate. The mobility <tex>$\\\\mu$</tex> enhances with <tex>$w1$</tex>. As <tex>$w1$</tex> increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of <tex>$\\\\mu$</tex> as a function of <tex>$w1$</tex>. This is due to the cusp like the fluctuation of <tex>$imp-$</tex> and <tex>$al-$</tex> intersubband scattering rate matrix elements.\",\"PeriodicalId\":344143,\"journal\":{\"name\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Electron Devices Kolkata Conference (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON.2018.8770423\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Intersubband Interaction on Non-Linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure
We study the effect of inter-subband interaction on nonlinear electron mobility $\mu$ in asymmetric $AlGaAs$ parabolic double quantum well structure. We take into account the ionized impurity $(imp-)$ and alloy disorder $(al-)$ scatterings for calculation of $\mu$. We keep well width $w2$ towards the surface side fixed and vary $\mu$ with well width $w1$ along the substrate. The mobility $\mu$ enhances with $w1$. As $w1$ increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of $\mu$ as a function of $w1$. This is due to the cusp like the fluctuation of $imp-$ and $al-$ intersubband scattering rate matrix elements.