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Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)最新文献

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GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications 采用离子注入技术制备用于2.4 ghz无线局域网的GaAs功率MESFET
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836427
Y. Lai, E. Chang, C. Chang, Don-Gey Liu, M. Her, M. Shiau, S. Yang, K.C. Chuang
{"title":"GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications","authors":"Y. Lai, E. Chang, C. Chang, Don-Gey Liu, M. Her, M. Shiau, S. Yang, K.C. Chuang","doi":"10.1109/HKEDM.1999.836427","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836427","url":null,"abstract":"In this paper, we present GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"233237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123281245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of rapid-thermal annealed Mg-doped GaN films 快速热退火掺镁GaN薄膜的光致发光
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836429
L.S. Wang, W. Fong, C. Surya, K. Cheah, W. Zheng, Z. Wang
{"title":"Photoluminescence of rapid-thermal annealed Mg-doped GaN films","authors":"L.S. Wang, W. Fong, C. Surya, K. Cheah, W. Zheng, Z. Wang","doi":"10.1109/HKEDM.1999.836429","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836429","url":null,"abstract":"We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7/spl sim/2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7/spl sim/2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127623804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Electrical modeling of MEMS sensor for integrated accelerometer applications 集成加速度计应用中MEMS传感器的电气建模
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836415
W.F. Lee, P. Chan, L. Siek
{"title":"Electrical modeling of MEMS sensor for integrated accelerometer applications","authors":"W.F. Lee, P. Chan, L. Siek","doi":"10.1109/HKEDM.1999.836415","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836415","url":null,"abstract":"A new electrical modeling method for mechanical capacitive sensor is proposed. The method is more direct and accurate in defining the mechanical sensor used for integrated accelerometer application as compared to the conventional ones. Both the open-loop and the force-balanced (closed-loop) cases have been considered. In addition, the model encompasses essential parameters to ensure it to mirror a realistic MEMS (microelectromechanical system) sensor. The derivation of the sensor model and application to the integrated accelerometer sensing circuit will be discussed. The simulation results will show the real-world effects of the parameters considered.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127491147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Base current instability of AlGaAs/GaAs HBTs operated at low voltages 低电压下AlGaAs/GaAs HBTs基极电流不稳定性
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836417
J. Liou, A. Rezazadeh
{"title":"Base current instability of AlGaAs/GaAs HBTs operated at low voltages","authors":"J. Liou, A. Rezazadeh","doi":"10.1109/HKEDM.1999.836417","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836417","url":null,"abstract":"This paper provides an analysis of the physical mechanisms underlying the long-term base current instability the AlGaAs/GaAs heterojunction bipolar transistor (HBT). Which a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT liability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current stabilities taking place in the low-voltage region is presented and discussed.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modulation response of VCSEL with lateral loss effects 具有横向损耗效应的VCSEL调制响应
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836402
S. Yu
{"title":"Modulation response of VCSEL with lateral loss effects","authors":"S. Yu","doi":"10.1109/HKEDM.1999.836402","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836402","url":null,"abstract":"Intensity noise and chromatic fiber dispersion in analog optical communication systems are attributed to harmonic and inter-modulation distortion in the amplitude modulation (AM) of semiconductor lasers. In addition, maximum usable bandwidth of the communication systems is limited by harmonic distortion. Due to the use of a Fabry Perot type resonator, second harmonic distortion (SHD) exists in both edge-emitting devices and VCSELs. But the distortion caused by lateral loss may be more so in VCSELs because of its smaller core size. Two factors: the lateral field confinement factor /spl Gamma/, and the lateral loss /spl alpha/ due to diffraction, are considered for their effect on harmonic distortion when the laser device is under small signal modulation.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125882108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode 功率p-i-n二极管电导率调制的载流子寿命复合测量
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836419
S. Oussalah, R. Jérisian
{"title":"Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode","authors":"S. Oussalah, R. Jérisian","doi":"10.1109/HKEDM.1999.836419","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836419","url":null,"abstract":"A simple and rapid method for determining the minority-carrier recombination lifetime /spl tau/ in the base of a power p-i-n diode is described. This method is based on the measurement of the basewidth conductivity modulation of junction diode, biased in the forward direction. The exploitation of the conductance-voltage characteristic allows to extract /spl tau/. This method will be implanted in the parametric test system (industrial equipment), the goal of which is to follow the parameter evolution of the ASD2/sup TM/ (Application Specific Discrete) process basic devices. To illustrate the method, it is compared to the reverse recovery methods.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121739062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charge transport and nature of traps in implanted silicon nitride 注入氮化硅中的电荷输运及陷阱性质
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836409
V. Gritsenko, Y. Morokov, J.B. Xu, N.B. Pridachin, V. Kalinin, A. Ng, L. Lau, R. Kwok
{"title":"Charge transport and nature of traps in implanted silicon nitride","authors":"V. Gritsenko, Y. Morokov, J.B. Xu, N.B. Pridachin, V. Kalinin, A. Ng, L. Lau, R. Kwok","doi":"10.1109/HKEDM.1999.836409","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836409","url":null,"abstract":"The authors study the charge transport in ion implanted Si/sub 3/N/sub 4/ and aim to understand the charge transport mechanism and the nature of defects responsible for the charge transport. They find that the charge transport is described by thermally assisted tunneling with trap energy in the range of 2.2 eV.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127763546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size effect in (Sr/sub x/Ba/sub 1-x/)Nb/sub 2/O/sub 6/ ultrafine powder (Sr/sub -x/ Ba/sub - 1-x/)Nb/sub - 2/O/sub - 6/超细粉体的粒径效应
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836406
Lu Sheng-Guo, Mak Chee-Leung, Wong Kin-Hung
{"title":"Size effect in (Sr/sub x/Ba/sub 1-x/)Nb/sub 2/O/sub 6/ ultrafine powder","authors":"Lu Sheng-Guo, Mak Chee-Leung, Wong Kin-Hung","doi":"10.1109/HKEDM.1999.836406","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836406","url":null,"abstract":"The sol-gel derived (Sr/sub x/Ba/sub 1-x/)Nb/sub 2/O/sub 6/ (SBN) ultrafine powder can be obtained at an annealing temperature as low as 700/spl deg/C, which is 500/spl deg/C lower than that previously reported. The powder has a well crystallized pure perovskite structure and its average crystallite size is about decades of nm. The specific heat has a broadened peak, and the transition temperature from the ferroelectric to the paraelectric phase is clearly lower than that of SBN bulk material. This new phenomenon can be ascribed to the size effect.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133423255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nondestructive measurement for multilayer inhomogeneous material based on multiresolution analysis 基于多分辨率分析的多层非均匀材料无损检测
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836422
Jianxin Zhu
{"title":"Nondestructive measurement for multilayer inhomogeneous material based on multiresolution analysis","authors":"Jianxin Zhu","doi":"10.1109/HKEDM.1999.836422","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836422","url":null,"abstract":"In this paper, a new and effective method based on multiresolution analysis (wavelet analysis) is proposed. It is used to nondestructively reconstruct the depth distribution of optical-absorption coefficient in multilayer inhomogeneous material with the photothermal signals which are related to the surface temperature of a sample. Numerical simulations and experimental data show that this method is feasible and the performance of the approach is better.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127087026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The optical properties of a modulation doped interdiffused quantum well 调制掺杂互扩散量子阱的光学性质
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836396
A.S.W. Lee, E. Li
{"title":"The optical properties of a modulation doped interdiffused quantum well","authors":"A.S.W. Lee, E. Li","doi":"10.1109/HKEDM.1999.836396","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836396","url":null,"abstract":"The linear and nonlinear (based on optical field intensity) intersubband electroabsorptions and the change in refractive index due to intersubband optical transitions in AlGaAs/GaAs diffused quantum wells are presented. The calculation of the electron energy levels and the envelope wave functions in a modulation doped interdiffused quantum wells with screening effects is considered. Effects of interdiffusion to the intersubband absorptions and refractive index changes in QWs with different well width, doping concentration, Al concentration ratio are discussed individually in detail with numerical results. The shift of the transition energies (mainly contributed by the lowest two subbands) will be a useful application in broadband and multicolour photodetectors.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127102802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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