GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836427

Y. Lai, E. Chang, C. Chang, Don-Gey Liu, M. Her, M. Shiau, S. Yang, K.C. Chuang

引用次数: 0

Abstract

In this paper, we present GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

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采用离子注入技术制备用于2.4 ghz无线局域网的GaAs功率MESFET

本文提出了一种应用于2.4 ghz无线通信的离子注入技术制备的GaAs功率mesfet。MESFET的饱和漏极电流为850 mA，最大跨导为145 mS/mm。3.36 mm宽MESFET工作频率为2.4 GHz，在2.5 V的低漏极电压下，输出功率为24.7 dBm，功率增加效率为56.4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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