功率p-i-n二极管电导率调制的载流子寿命复合测量

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836419

S. Oussalah, R. Jérisian

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引用次数: 1

摘要

本文描述了一种简便、快速测定功率p-i-n二极管基极少数载流子复合寿命的方法。该方法是基于测量结二极管的基宽电导率调制，偏置在正向。利用电导电压特性可以提取/spl tau/。该方法将被植入参数测试系统(工业设备)，其目标是遵循ASD2/sup TM/ (Application Specific Discrete)工艺基本设备的参数演变。为了说明该方法，将其与反向恢复方法进行了比较。

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Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode

A simple and rapid method for determining the minority-carrier recombination lifetime /spl tau/ in the base of a power p-i-n diode is described. This method is based on the measurement of the basewidth conductivity modulation of junction diode, biased in the forward direction. The exploitation of the conductance-voltage characteristic allows to extract /spl tau/. This method will be implanted in the parametric test system (industrial equipment), the goal of which is to follow the parameter evolution of the ASD2/sup TM/ (Application Specific Discrete) process basic devices. To illustrate the method, it is compared to the reverse recovery methods.

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Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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