Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode

Abstract

A simple and rapid method for determining the minority-carrier recombination lifetime /spl tau/ in the base of a power p-i-n diode is described. This method is based on the measurement of the basewidth conductivity modulation of junction diode, biased in the forward direction. The exploitation of the conductance-voltage characteristic allows to extract /spl tau/. This method will be implanted in the parametric test system (industrial equipment), the goal of which is to follow the parameter evolution of the ASD2/sup TM/ (Application Specific Discrete) process basic devices. To illustrate the method, it is compared to the reverse recovery methods.