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Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)最新文献

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A physical approach to enhance BSIM3 NQS model for fast transient simulation 增强 BSIM3 NQS 模型快速瞬态模拟的物理方法
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836421
Wai-kit Lee, M. Chan, P. Ko
{"title":"A physical approach to enhance BSIM3 NQS model for fast transient simulation","authors":"Wai-kit Lee, M. Chan, P. Ko","doi":"10.1109/HKEDM.1999.836421","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836421","url":null,"abstract":"An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, the existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behavior is like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has been made with results obtained from a 2-D device simulator. The time penalty for using the new enhancement is about 18% more than the original model.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128217340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection 具有应变AlInP势垒增强层的用于平衡外差检测的InP/GaInAs/InP双金属-半导体-金属光电探测器
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836395
C. Shu, P. Chan, C. Hsu
{"title":"InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection","authors":"C. Shu, P. Chan, C. Hsu","doi":"10.1109/HKEDM.1999.836395","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836395","url":null,"abstract":"A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134057771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Calculation of junction temperature in heterojunction bipolar transistors 异质结双极晶体管结温的计算
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836420
Yang-Hua Chang, Ying-Yih Wu, J.-M. Lu
{"title":"Calculation of junction temperature in heterojunction bipolar transistors","authors":"Yang-Hua Chang, Ying-Yih Wu, J.-M. Lu","doi":"10.1109/HKEDM.1999.836420","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836420","url":null,"abstract":"A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of I/sub C/ as a function of V/sub BE/ at only a few substrate temperatures, junction temperature can be derived. Measured results are shown with a multi-finger AlGaAs/GaAs transistor.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133423068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of porous silicon gas sensor 多孔硅气体传感器的研究
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836413
W. Kwok, Y. Bow, W. Y. Chan, M. Poon, P. Wan, H. Wong
{"title":"Study of porous silicon gas sensor","authors":"W. Kwok, Y. Bow, W. Y. Chan, M. Poon, P. Wan, H. Wong","doi":"10.1109/HKEDM.1999.836413","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836413","url":null,"abstract":"Porous silicon (Si) and porous poly-Si organic and humidity vapor sensors have been studied. For aluminum (Al)/porous Si/p-Si/Al Schottky diode sensor, the sensitivity compared to air at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol vapor are about 400, 500, 1000 and 4000% respectively. Sensitivity for 800-2600 ppm ethanol is 200 to 4000%. The sensor can be converted into an Al/porous Si/Al resistor sensor with sensitivity of about 500 times for a humidity change of 43-75%. Both sensors have response time of about 0.5 min and sensitivity is repeatable and stable with time. The porous Si sensor can be integrated into other VLSI Si devices to form novel microelectronic systems.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134437396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al/sub 2/O/sub 3/ (0001) Al/sub 2/O/sub 3/ MOCVD生长mg掺杂GaN形成混合相的离子通道研究(0001)
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI: 10.1109/HKEDM.1999.836428
B. Sundaravel, E. Luo, J.B. Xu, I. Wilson, P. Fong, L.S. Wang, C. Surya
{"title":"Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al/sub 2/O/sub 3/ (0001)","authors":"B. Sundaravel, E. Luo, J.B. Xu, I. Wilson, P. Fong, L.S. Wang, C. Surya","doi":"10.1109/HKEDM.1999.836428","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836428","url":null,"abstract":"Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al/sub 2/O/sub 3/(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution X-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN [101~0]/spl par/A1/sub 2/O/sub 3/[101~0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113955030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of 1/f noise in III-V nitride based MODFETs at low drain bias 低漏极偏压下III-V型氮基modfet的1/f噪声研究
Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1999.836424
W. Ho, C. Suryaa, K. Tong
{"title":"Study of 1/f noise in III-V nitride based MODFETs at low drain bias","authors":"W. Ho, C. Suryaa, K. Tong","doi":"10.1109/HKEDM.1999.836424","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836424","url":null,"abstract":"Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S/sub v/(f), were found to be proportional to 1/f/sup /spl gamma// where /spl gamma/ depends on the device temperature as well as the gate bias. Study of S/sub v/(f) as a function of the biasing condition was conducted in detail and were found to vary as V/sub G//sup 2//(V/sub G/-V/sub T/)/sup /spl beta// where /spl beta/ is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"290 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125254657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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