InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836395

C. Shu, P. Chan, C. Hsu

引用次数: 3

Abstract

A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.

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具有应变AlInP势垒增强层的用于平衡外差检测的InP/GaInAs/InP双金属-半导体-金属光电探测器

制备了一种具有应变Al/sub 0.1/In/sub 0.9/P帽层的单片InP/Ga/sub 0.47/In/sub 0.53/As/InP金属-半导体-金属光电探测器。双光电探测器表现出紧密匹配的频率特性。实验证明了100mhz平衡外差检测中有效的激光强度噪声抑制和节拍信号增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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