{"title":"具有应变AlInP势垒增强层的用于平衡外差检测的InP/GaInAs/InP双金属-半导体-金属光电探测器","authors":"C. Shu, P. Chan, C. Hsu","doi":"10.1109/HKEDM.1999.836395","DOIUrl":null,"url":null,"abstract":"A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection\",\"authors\":\"C. Shu, P. Chan, C. Hsu\",\"doi\":\"10.1109/HKEDM.1999.836395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.\",\"PeriodicalId\":342844,\"journal\":{\"name\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1999.836395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection
A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
