异质结双极晶体管结温的计算

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836420

Yang-Hua Chang, Ying-Yih Wu, J.-M. Lu

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引用次数: 1

摘要

提出了一种计算异质结双极晶体管结温的方法。仅在少数衬底温度下，通过测量I/sub C/作为V/sub BE/的函数，就可以推导出结温。测量结果显示了多指AlGaAs/GaAs晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Calculation of junction temperature in heterojunction bipolar transistors

A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of I/sub C/ as a function of V/sub BE/ at only a few substrate temperatures, junction temperature can be derived. Measured results are shown with a multi-finger AlGaAs/GaAs transistor.

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来源期刊

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

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