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Proceedings of the 5th European Workshop on Low Temperature Electronics最新文献

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The impact of an external body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs at cryogenic temperatures 外体偏置对低温下部分耗尽SOI n - mosfet热载流子降解的影响
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022441
F. Dieudonné, J. Jomaah, C. Raynaud, F. Balestra
{"title":"The impact of an external body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs at cryogenic temperatures","authors":"F. Dieudonné, J. Jomaah, C. Raynaud, F. Balestra","doi":"10.1109/WOLTE.2002.1022441","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022441","url":null,"abstract":"Hot-carrier effects were studied in body-tied Partially Depleted SOI MOSFETs in a wide range of temperature, from 300 K down to 20 K. Devices under experimental tests were 0.25 μm long N-MOSFETs with a 10μm width. In this paper, the role of externally applied body-bias on the hot-carrier induced degradation is further investigated for five different temperatures. Our devices underwent accelerated electrical stress applying different negative body-biases as well as drain and front gate biases chosen to obtain reasonable stress duration. The variations of the main electrical parameters such as the maximal transconductance, the driving current or the threshold voltage are reported.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mesoscopic transport characteristics of nano-scale SOI MOSFETs: coulomb blockade and localization 纳米SOI mosfet的介观输运特性:库仑阻滞和局域化
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022457
Y. Omura, M. Yamamoto
{"title":"Mesoscopic transport characteristics of nano-scale SOI MOSFETs: coulomb blockade and localization","authors":"Y. Omura, M. Yamamoto","doi":"10.1109/WOLTE.2002.1022457","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022457","url":null,"abstract":"This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that non-periodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128820120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of radiation hardness of SIS junctions for space borne radio astronomy 星载射电天文SIS节点辐射硬度研究
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022475
I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. SaIez, K. Schuster
{"title":"Investigation of radiation hardness of SIS junctions for space borne radio astronomy","authors":"I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. SaIez, K. Schuster","doi":"10.1109/WOLTE.2002.1022475","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022475","url":null,"abstract":"Submillimeter astronomy with SIS (Superconductor-Insulator-Superconductor) mixers in space offer access to new wavelength windows and unsurpassed sensitivity. However little is known about the behavior of these devices in space. The Heterodyne Instrument (HIFI) aboard ESA's cornerstone Herschel Space Observatory (formely FIRST) satellite, scheduled for launch in 2007, will be among the first instrument using SIS technology in space. Within this context it is important to study possible radiation damage effects in SIS tunnel junctions. The particular devices used for HERSCHEL-HIFI-Band 1 (480-640 GHz) were fabricated with a new process based on negative resist E-beam lithography and very high current densities (15 kA/cm 2 ). In this paper, we report on radiation hardness tests with 10 MeV protons on the described high current density Nb/Al-AlOx/Nb junctions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131244902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Demonstration of an 4.2 K analog switch matrix in a standard 0.7 /spl mu/ CMOS process 在标准的0.7 /spl mu/ CMOS工艺中演示4.2 K模拟开关矩阵
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022483
Y. Creten, J. De Hert, O. Charlier, P. Merken, J. Putzeys, C. Van Hoof
{"title":"Demonstration of an 4.2 K analog switch matrix in a standard 0.7 /spl mu/ CMOS process","authors":"Y. Creten, J. De Hert, O. Charlier, P. Merken, J. Putzeys, C. Van Hoof","doi":"10.1109/WOLTE.2002.1022483","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022483","url":null,"abstract":"In this extended abstract a 4x4 Field Programmable Analogue Array or switch matrix is presented. Design and preliminary data will be discussed.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132579640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron transport in silicon nanostructures based on ultra-thin SOI 基于超薄SOI的硅纳米结构中的电子输运
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022458
A. Pouydebasquel, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat, L. Saminadayar
{"title":"Electron transport in silicon nanostructures based on ultra-thin SOI","authors":"A. Pouydebasquel, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat, L. Saminadayar","doi":"10.1109/WOLTE.2002.1022458","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022458","url":null,"abstract":"We present an experimental study of ultra-thin SOI-based nanostructures. The systems have a van der Pauw geometry, with a radius of 2 μm. The resistance per square R is first analyzed in the temperature range 300 K-4.2 K, and for different conditions of back gate voltages (0 V< V R <4 V). The magnetoresistance was measured at very low temperatures (10 mK < T< 900 mK), for magnetic fields -2500 G< B < 2500 G. The experimental results exhibit a negative magnetoresistance that we attribute to quantum interference effects due to time reversed electron paths and known as weak localization. Fundamental properties of the material at low temperatures such as the electron phase coherence length l Φ , the elastic mean free path l, and the mobility μ are then estimated throughout the obtained results.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124552165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Absolute high-T/sub c/ superconducting radiometer with electrical-substitution for x-rays measurements 用电替代x射线测量的绝对高t /sub - c/超导辐射计
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022467
I. A. Khrebtov, A. Tkachenko, K. V. Ivanov, A. Nikolenko, V. Pindyurin
{"title":"Absolute high-T/sub c/ superconducting radiometer with electrical-substitution for x-rays measurements","authors":"I. A. Khrebtov, A. Tkachenko, K. V. Ivanov, A. Nikolenko, V. Pindyurin","doi":"10.1109/WOLTE.2002.1022467","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022467","url":null,"abstract":"The present work considers the practical possibility of the construction of an absolute radiometer with electrical substitution for power based on the high-T c superconducting YBaCuO film bolometer cooled with liquid nitrogen to measure the power of radiation of the X-ray range circa 1μW with an accuracy of 1%. This accuracy is provided with high sensitivity of the bolometers, having the noise equivalent power about 3.8×10 -12 W/ Hz 1/2 (with modulation) and 2.6×10 -9 W (without modulation). The main sources affecting on an accuracy of the absolute measurements such as external reflection, the passage of radiation through the substrate, photo-stimulated electron emission from the receiving surface, the stability of synchrotron radiation source and instability of cryostat temperature are analysed. The radiometer can be applied to measure absolute power of white and monochromatic synchrotron radiation flows in the spectral range from 80 to 2000eV.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129508041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Si nano-devices using an electron-hole system 使用电子-空穴系统的硅纳米器件
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022456
A. Fujiwara, Y. Takahashi
{"title":"Si nano-devices using an electron-hole system","authors":"A. Fujiwara, Y. Takahashi","doi":"10.1109/WOLTE.2002.1022456","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022456","url":null,"abstract":"Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the'electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125438066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs 低于0.1 /spl μ m的超薄栅极氧化物mosfet的低温工作
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022450
B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan
{"title":"Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs","authors":"B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan","doi":"10.1109/WOLTE.2002.1022450","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022450","url":null,"abstract":"The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124731571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon 硅片上沉积NbN半导体薄膜77k ~ 300k低频噪声的研究
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022476
G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy
{"title":"Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon","authors":"G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy","doi":"10.1109/WOLTE.2002.1022476","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022476","url":null,"abstract":"In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO/sub 2/ films 3nm厚SiO/sub /薄膜软击穿后的低温导电机理
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI: 10.1109/WOLTE.2002.1022459
K. Komiya, Y. Omura, T. Oka, M. Nagahara
{"title":"Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO/sub 2/ films","authors":"K. Komiya, Y. Omura, T. Oka, M. Nagahara","doi":"10.1109/WOLTE.2002.1022459","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022459","url":null,"abstract":"The experimentally determined conduction mechanisms of gate leakage current are examined for two different soft-breakdown events: analog-soft-breakdown and digital-soft-breakdown. It is strongly suggested that neither variable-range-hopping conduction nor space-charge-limited conduction, by themselves, form the major part of possible conduction mechanisms after analog-soft-breakdown events. On the other hand, it is found that the incremental gate current after digital-soft-breakdown events can be expressed in a simple closed form as functions of temperature and gate voltage; the expression indicates that the post-digital-soft-breakdown current is not ruled by a simple or single conduction mechanism.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124320399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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