星载射电天文SIS节点辐射硬度研究

I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. SaIez, K. Schuster
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引用次数: 3

摘要

在太空中使用SIS(超导体-绝缘体-超导体)混频器的亚毫米天文学提供了新的波长窗口和无与伦比的灵敏度。然而,人们对这些设备在太空中的行为知之甚少。欧空局的赫歇尔空间天文台(前身为FIRST)卫星上的外差仪器(HIFI)计划于2007年发射,它将是第一批在太空中使用SIS技术的仪器之一。在这种情况下,研究SIS隧道结可能的辐射损伤效应是很重要的。用于HERSCHEL-HIFI-Band 1 (480-640 GHz)的特殊器件采用基于负阻电子束光刻和非常高电流密度(15 kA/ cm2)的新工艺制造。本文报道了用10 MeV质子对高电流密度Nb/Al-AlOx/Nb结进行的辐射硬度测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of radiation hardness of SIS junctions for space borne radio astronomy
Submillimeter astronomy with SIS (Superconductor-Insulator-Superconductor) mixers in space offer access to new wavelength windows and unsurpassed sensitivity. However little is known about the behavior of these devices in space. The Heterodyne Instrument (HIFI) aboard ESA's cornerstone Herschel Space Observatory (formely FIRST) satellite, scheduled for launch in 2007, will be among the first instrument using SIS technology in space. Within this context it is important to study possible radiation damage effects in SIS tunnel junctions. The particular devices used for HERSCHEL-HIFI-Band 1 (480-640 GHz) were fabricated with a new process based on negative resist E-beam lithography and very high current densities (15 kA/cm 2 ). In this paper, we report on radiation hardness tests with 10 MeV protons on the described high current density Nb/Al-AlOx/Nb junctions.
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