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Proceedings of the 5th European Workshop on Low Temperature Electronics最新文献

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DC and 1/f noise characterization of crogenically cooled pseudomorphic HEMT's 低温冷却伪晶HEMT的直流和1/f噪声特性
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022462
G. Ferrante, F. Principato, A. Caddemi, N. Donato, G. Tuccari
{"title":"DC and 1/f noise characterization of crogenically cooled pseudomorphic HEMT's","authors":"G. Ferrante, F. Principato, A. Caddemi, N. Donato, G. Tuccari","doi":"10.1109/WOLTE.2002.1022462","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022462","url":null,"abstract":"Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128702846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits 集成铌薄膜空气桥作为千兆赫调谐电路的可变电容器
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022477
M. Schicke, K. Schuster
{"title":"Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits","authors":"M. Schicke, K. Schuster","doi":"10.1109/WOLTE.2002.1022477","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022477","url":null,"abstract":"Superconducting GHz electronics can be improved by variable tuning circuits. We present a low temperature (< 150°C) process for the fabrication of niobium (Nb) thin film air bridges as variable capacitors, which can be integrated in Nb superconducting electronics. These elements can be applied for on-chip adjustment of filters, resonators and tuning circuits. Measurements and calculations of the electrostatic actuation of the bridges will be compared.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132552772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependence of generation-recombination noise in p-n junctions p-n结中产生复合噪声的温度依赖性
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022453
J. Tejada, A. Godoy, A. Palma, P. Cartujo
{"title":"Temperature dependence of generation-recombination noise in p-n junctions","authors":"J. Tejada, A. Godoy, A. Palma, P. Cartujo","doi":"10.1109/WOLTE.2002.1022453","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022453","url":null,"abstract":"Fundamental aspects of the p-n junction have been considered in order to obtain an analytical model for generation-recombination (g-r) current noise. Considering neutrality and fixed-bias voltage conditions a fluctuation in the charge trapped in deep levels is related to fluctuations of the charge density and the electric field at the borders of the space-charge region. These variations are then converted to current fluctuations making use of a collective transport noise theory. Generation-recombination current noise in p-n junctions is analyzed at low and high temperatures for different bias conditions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117004239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-T/sub c/ superconducting microbolorneter for terahertz applications 用于太赫兹应用的高t /sub /超导微纵波计
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022468
C. Ulysse, A. Gaugue, A. Adam, A. Kreisler, J. Villégier, J. Thomassin
{"title":"High-T/sub c/ superconducting microbolorneter for terahertz applications","authors":"C. Ulysse, A. Gaugue, A. Adam, A. Kreisler, J. Villégier, J. Thomassin","doi":"10.1109/WOLTE.2002.1022468","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022468","url":null,"abstract":"Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize Y BaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126103295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime 极低温下极限mosfet的随机电报噪声
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022460
X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus
{"title":"Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime","authors":"X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus","doi":"10.1109/WOLTE.2002.1022460","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022460","url":null,"abstract":"We study electronic transport and current noise in 50nm gate length PMOSFETs at very low temperature (T<1K). In the linear regime the drain source current versus gate voltage below the threshold voltage exhibits reproducible sharp resonances due to coherent transport through the disordered channel. We present first experiment showing the time dependence of these resonances particularly the amount of random telegraph and 1/f noise which affect the resonance pattern. Implications for sensitive electrometry are discussed.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133231998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low frequency noise in YBaCuO superconducting thin films deposited on MgO MgO上沉积YBaCuO超导薄膜的低频噪声
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022478
G. Leroy, J. Gest, P. Tabourier, J. Carru, A. Dégardin, A. Kreisler
{"title":"Low frequency noise in YBaCuO superconducting thin films deposited on MgO","authors":"G. Leroy, J. Gest, P. Tabourier, J. Carru, A. Dégardin, A. Kreisler","doi":"10.1109/WOLTE.2002.1022478","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022478","url":null,"abstract":"s In this paper we present a comparison of DC and electrical noise characteristics of high-temperature superconducting thin films. Two YBaCuO thin films deposited on MgO substrates were studied and compared. The R-T, I-V and electrical noise properties were studied for each film. Noise measurements show that they are more sensitive than the DC ones. They can give evidence of physical phenomena such as pre-transitional superconducting effect.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128881099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body 低温运行0.13 /spl mu/m浮体部分耗尽SOI nmosfet
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022446
M. Pavanello, J. Martino, A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, H. van Meer, K. De Meyer
{"title":"Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body","authors":"M. Pavanello, J. Martino, A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, H. van Meer, K. De Meyer","doi":"10.1109/WOLTE.2002.1022446","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022446","url":null,"abstract":"An extended low temperature study of 0.13μm Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131061271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 20-GHz FLUX-1 superconductor RSFQ microprocessor 一种20 ghz FLUX-1超导体RSFQ微处理器
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022472
M. Dorojevets
{"title":"A 20-GHz FLUX-1 superconductor RSFQ microprocessor","authors":"M. Dorojevets","doi":"10.1109/WOLTE.2002.1022472","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022472","url":null,"abstract":"The first single-chip superconductor FLUX-1 microprocessor prototype with a target clock frequency of 17-20 GHz has been designed in the Rapid Single Flux Quantum (RSFQ) logic and fabricated using low-temperature 4 kA/cm 2 , 1.75-μm Nb/AlOx/Nb Josephson junction technology. A FLUX-1 chip represents an 8-bit deeply pipelined microprocessor with a new parallel partitioned architecture that has been developed to tolerate interconnect delays and fill long FLUX-1 pipelines with operations. A FLUX-1 chip contains 65,759 Josephson junctions on a 10.6 mm x 13.2 mm die with flip-chip packaging. First FLUX-1 chips fabricated in 2001 are currently under testing at TRW.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"8 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134297352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Low frequency noise versus temperature spectroscopy of Go JFETs, Si JFETs and Si MOSFETs Go jfet, Si jfet和Si mosfet的低频噪声与温度光谱
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022447
D. Camin, C. Colombo, V. Grassi
{"title":"Low frequency noise versus temperature spectroscopy of Go JFETs, Si JFETs and Si MOSFETs","authors":"D. Camin, C. Colombo, V. Grassi","doi":"10.1109/WOLTE.2002.1022447","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022447","url":null,"abstract":"We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124694770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
New silicon devices beyond CMOS 超越CMOS的新型硅器件
Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI: 10.1109/WOLTE.2002.1022445
E. Suzuki, K. Ishii, T. Sekigawa
{"title":"New silicon devices beyond CMOS","authors":"E. Suzuki, K. Ishii, T. Sekigawa","doi":"10.1109/WOLTE.2002.1022445","DOIUrl":"https://doi.org/10.1109/WOLTE.2002.1022445","url":null,"abstract":"Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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