DC and 1/f noise characterization of crogenically cooled pseudomorphic HEMT's

Abstract

Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.