New silicon devices beyond CMOS

Abstract

Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.