{"title":"Go jfet, Si jfet和Si mosfet的低频噪声与温度光谱","authors":"D. Camin, C. Colombo, V. Grassi","doi":"10.1109/WOLTE.2002.1022447","DOIUrl":null,"url":null,"abstract":"We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Low frequency noise versus temperature spectroscopy of Go JFETs, Si JFETs and Si MOSFETs\",\"authors\":\"D. Camin, C. Colombo, V. Grassi\",\"doi\":\"10.1109/WOLTE.2002.1022447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low frequency noise versus temperature spectroscopy of Go JFETs, Si JFETs and Si MOSFETs
We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
