Temperature dependence of generation-recombination noise in p-n junctions

Abstract

Fundamental aspects of the p-n junction have been considered in order to obtain an analytical model for generation-recombination (g-r) current noise. Considering neutrality and fixed-bias voltage conditions a fluctuation in the charge trapped in deep levels is related to fluctuations of the charge density and the electric field at the borders of the space-charge region. These variations are then converted to current fluctuations making use of a collective transport noise theory. Generation-recombination current noise in p-n junctions is analyzed at low and high temperatures for different bias conditions.