低温运行0.13 /spl mu/m浮体部分耗尽SOI nmosfet

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-11-07 DOI:10.1109/WOLTE.2002.1022446

M. Pavanello, J. Martino, A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, H. van Meer, K. De Meyer

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引用次数: 0

摘要

对无体接触的0.13μm部分耗尽绝缘体上硅fet进行了扩展的低温研究。研究了HALO掺杂特性对器件输出性能的影响。从数字和模拟电路应用的角度探讨了该技术的电学特性。还研究了固有寄生双极效应的发生。

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Low temperature operation of 0.13 /spl mu/m partially-depleted SOI nMOSFETs with floating body

An extended low temperature study of 0.13μm Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied.

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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