Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

Abstract

In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.