Mesoscopic transport characteristics of nano-scale SOI MOSFETs: coulomb blockade and localization

Abstract

This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that non-periodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.