{"title":"低于0.1 /spl μ m的超薄栅极氧化物mosfet的低温工作","authors":"B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan","doi":"10.1109/WOLTE.2002.1022450","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs\",\"authors\":\"B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan\",\"doi\":\"10.1109/WOLTE.2002.1022450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022450\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs
The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.
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