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2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)最新文献

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Planarization of the porous surface of composition “nanoporous silicon dioxide - titanium dioxide” by atomic-molecular chemical assembly 原子-分子化学组装“纳米多孔二氧化硅-二氧化钛”组合物多孔表面的平面化
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886522
V. Luchinin, M. Panov, A. A. Romanov
{"title":"Planarization of the porous surface of composition “nanoporous silicon dioxide - titanium dioxide” by atomic-molecular chemical assembly","authors":"V. Luchinin, M. Panov, A. A. Romanov","doi":"10.1109/BALD.2016.7886522","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886522","url":null,"abstract":"The surface planarization of nanoporous SiO2 is made by method of atomic-molecular layer deposition of TiO2 nanofilm in different modes. A penetration of TiO2 in nano-pores of SiO2 is controlled by ellipsometry.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125198781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of the quality of the dielectric spectroscopy data 电介质光谱数据质量的评价
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886537
A. G. Karpov, V. A. Klemeshev
{"title":"Evaluation of the quality of the dielectric spectroscopy data","authors":"A. G. Karpov, V. A. Klemeshev","doi":"10.1109/BALD.2016.7886537","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886537","url":null,"abstract":"The dielectric spectroscopy data contains information on both the structure and internal bonds of the material and its functional properties. Due to the principles of dielectric spectroscopy, such measurements require rather complex processing algorithms.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127831721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Premises of solution errors in Poisson's equation describing field electron emission system 描述场电子发射系统的泊松方程解误差的前提
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886534
N. Egorov, K. Ivanova
{"title":"Premises of solution errors in Poisson's equation describing field electron emission system","authors":"N. Egorov, K. Ivanova","doi":"10.1109/BALD.2016.7886534","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886534","url":null,"abstract":"Field electron emission systems are described by the Poissons equation for electrostatic potential. For the simple vacuum microdiode, consisting of the cathode and the anode, it is supposed that input data of equation have inherent errors of measurements. Numerical solution of a two-dimensional Poisson equation together with Dirichlet boundary conditions is reduced to the solution of an interval system of linear algebraic equations. The algorithm of two-sided estimation of an error of solution is formalized on two point-wise matrices of the system by the analysis of scalar component-wise product of elements of a matrix and their cofactors.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133549976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method 用PEALD法在氧化铝衬底上生长异质外延氮化铝薄膜
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886528
V. Tarala, A. Altakhov, M. Ambartsumov, V. Martens, M. Shevchenko
{"title":"Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method","authors":"V. Tarala, A. Altakhov, M. Ambartsumov, V. Martens, M. Shevchenko","doi":"10.1109/BALD.2016.7886528","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886528","url":null,"abstract":"Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rocking curve methods. It was found that synthesized films have refractive index of 2.03 plus-minus 0.03. XRD scans show reflections at 2 theta equal 35.7 degree (0002) and 75.9 degree (0004), characteristic to hexagonal AlN polytype. For the best specimen, full width at half maximum of (0002) rocking curve scan was close to 162 plus-minus 11 arcsec.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123998326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer deposition of tin oxide nanofilms using tetraethyltin 用四乙基锡原子层沉积氧化锡纳米膜
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886523
D. Nazarov, M. Maximov, P. Novikov, A. Popovich, V. Smirnov
{"title":"Atomic layer deposition of tin oxide nanofilms using tetraethyltin","authors":"D. Nazarov, M. Maximov, P. Novikov, A. Popovich, V. Smirnov","doi":"10.1109/BALD.2016.7886523","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886523","url":null,"abstract":"Due to variety of applications of tin oxide thin films such as solid state gas sensors, solar cells, transparent conductive oxide coatings, catalysts, and anodes for Li-ion batteries, it is desirable to develop convenient and high effective technique of atomic layer deposition for this material. In this paper we consider in details the prospects of using tetraethyltin to produce thin films of tin dioxide by atomic layer deposition. Water, hydrogen peroxide, oxygen, ozone and oxygen plasma were used as co-reactants for SnOx deposition. It was found that the type of co-reactant has a huge impact on the growth rate, composition and morphology of the films. Features of synthesis and prospects for use the films in lithium-ion batteries are considered.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124829720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental study of the low threshold electron emission behavior from multi-layered graphene-like structures 多层类石墨烯结构低阈值电子发射行为的实验研究
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886536
G. Fursey, I. Zakirov, N. Egorov, V. Trofimov
{"title":"Experimental study of the low threshold electron emission behavior from multi-layered graphene-like structures","authors":"G. Fursey, I. Zakirov, N. Egorov, V. Trofimov","doi":"10.1109/BALD.2016.7886536","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886536","url":null,"abstract":"The comprehensive study of the low threshold electron emission from multi-layered graphene-like structures (GLS) has been undertaken. The spectrum of emitted electrons from GLS has been obtained by retarding potential method. The state of the surface has been evaluated using scanning electron microscopy (SEM) and field emission microscopy (FEM). The peculiarities of the structure of experimental samples were analyzed by the methods of Raman spectroscopy and X-ray diffraction. It has been found that the maximum of the energy distribution is displaced 6.1–6.8 eV below the vacuum values. It has been observed that with the growth of the electric field the maximum of the energy distribution shifts to the region of low energies while the energy spectrum broadens up to 0.7–1.2 eV. Studies of the emitting surface by FEM and SEM allowed one to conclude that the surface is sufficiently smooth. The field enhancement factor due to the micro-roughness does not exceed 3–10 times.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122021918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Progress in device from Molecular Layering to atomic layer deposition worldwide technology 器件从分子层沉积到原子层沉积的国际技术进展
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886521
V. Drozd
{"title":"Progress in device from Molecular Layering to atomic layer deposition worldwide technology","authors":"V. Drozd","doi":"10.1109/BALD.2016.7886521","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886521","url":null,"abstract":"ML-ALD can provide highly pure materials with structural control at atomic scale level. During ten years it evolves as pure chemical process for adsorbent and catalyst practical goal and with strong theoretical base on original point of view on the solid state surface. Self-made devices for this were inert gas flow type atmospheric pressure and glass and rubber materials. Only ten years later devices transform to vacuum and stainless steel chambers with ingenuous automation. In the beginning of 70-s ML-ALD technology had no role to play in electronics neither in SU not in other countries as the gate insulator has hundreds of angstroms. The main materials been discussed in 80-th and 90-th were III–V compounds and oxides grown in flow type reactors. In Leningrad science school flow type (travelling wave) reactors were in use till the mid of 90-s. Besides oxide materials in our laboratories II–VI compounds were synthesized. The chamber of rotation type with substrate laid on hot plate and two zones of precursors divided by quartz plates from inert purge gas zones. In the middle of 90-s we decided an issue by inverting substrate and made levitation type of a chamber. These permits us synthesized CdTe compound with record growth rate of about some microns in hour. In theory ML-ALD idea gives excellent opportunity in a growth of high quality layers with high growth rate.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131320720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Genesis of ZnO nanolayers grown by ALD in micro channel plates ALD在微通道板中生长ZnO纳米层的成因
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886529
A. Yafyasov, A. Drozd, V. Drozd, S. Kesaev
{"title":"Genesis of ZnO nanolayers grown by ALD in micro channel plates","authors":"A. Yafyasov, A. Drozd, V. Drozd, S. Kesaev","doi":"10.1109/BALD.2016.7886529","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886529","url":null,"abstract":"In this work we investigated the possibility of applying the method of Atomic Layer Deposition to obtain thin films of zinc oxide deposited in narrow channels of micro channel plate. Calculations were carried out to find the optimum conditions for the synthesis. The resulting films have good continuity and uniformity. The electrical conductivity was studied on zinc oxide in the initial stages of growth on structures which we prepared.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134478983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Software tools for profile analysis of multi-layered systems by using the Elastic Peak Electron Spectroscopy 利用弹性峰电子能谱对多层系统进行剖面分析的软件工具
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886531
V. Afanas’ev, A. Gryazev, P. Kaplya, D. Efremenko, O. Ridzel
{"title":"Software tools for profile analysis of multi-layered systems by using the Elastic Peak Electron Spectroscopy","authors":"V. Afanas’ev, A. Gryazev, P. Kaplya, D. Efremenko, O. Ridzel","doi":"10.1109/BALD.2016.7886531","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886531","url":null,"abstract":"The new generation of spectrometers with high energy resolution can resolve elastic peaks of electrons reflected by atoms in solids. In this regard, there is an increasing interest in the applications of the so-called Elastic Peak Electron Spectroscopy (EPES) for measuring composition-versus-depth profiles since it is non-destructive and sensible to the presence of hydrogen in solids. This study presents numerical tools for quantitative interpretation of the EPES signal. They include modules for peak detecting, estimating the elastic peak intensities and retrieving composition-versus-depth profiles. The latter is based on the transport theory and invokes the straight line approximation (SLA). The examples of profile retrieval using the SLA are given. The accuracy of the proposed model is analyzed.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133063084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Protective coatings for tip field emitters operating at high voltages 在高压下工作的尖端场发射器的保护涂层
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI: 10.1109/BALD.2016.7886540
G. Sominskii, T. Tumareva, E. Taradaev
{"title":"Protective coatings for tip field emitters operating at high voltages","authors":"G. Sominskii, T. Tumareva, E. Taradaev","doi":"10.1109/BALD.2016.7886540","DOIUrl":"https://doi.org/10.1109/BALD.2016.7886540","url":null,"abstract":"The possibilities of operation in technical vacuum condition of single tip field emitters with protective fullerene coatings were studied. Emission currents from a tungsten tip of about 50 µA were achieved. Field emission currents of the order of 100 mA from silicon multitip emitter with area of 0.25 sq cm were achieved.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"291 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122961931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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