ALD在微通道板中生长ZnO纳米层的成因

2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI:10.1109/BALD.2016.7886529

A. Yafyasov, A. Drozd, V. Drozd, S. Kesaev

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引用次数: 0

摘要

本文研究了应用原子层沉积法在微通道板的窄通道中沉积氧化锌薄膜的可能性。通过计算找到了合成的最佳条件。所得薄膜具有良好的连续性和均匀性。研究了所制备的结构在氧化锌生长初期的电导率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Genesis of ZnO nanolayers grown by ALD in micro channel plates

In this work we investigated the possibility of applying the method of Atomic Layer Deposition to obtain thin films of zinc oxide deposited in narrow channels of micro channel plate. Calculations were carried out to find the optimum conditions for the synthesis. The resulting films have good continuity and uniformity. The electrical conductivity was studied on zinc oxide in the initial stages of growth on structures which we prepared.

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2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)

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