在高压下工作的尖端场发射器的保护涂层

2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) Pub Date : 2016-10-01 DOI:10.1109/BALD.2016.7886540

G. Sominskii, T. Tumareva, E. Taradaev

{"title":"在高压下工作的尖端场发射器的保护涂层","authors":"G. Sominskii, T. Tumareva, E. Taradaev","doi":"10.1109/BALD.2016.7886540","DOIUrl":null,"url":null,"abstract":"The possibilities of operation in technical vacuum condition of single tip field emitters with protective fullerene coatings were studied. Emission currents from a tungsten tip of about 50 µA were achieved. Field emission currents of the order of 100 mA from silicon multitip emitter with area of 0.25 sq cm were achieved.","PeriodicalId":328869,"journal":{"name":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","volume":"291 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Protective coatings for tip field emitters operating at high voltages\",\"authors\":\"G. Sominskii, T. Tumareva, E. Taradaev\",\"doi\":\"10.1109/BALD.2016.7886540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The possibilities of operation in technical vacuum condition of single tip field emitters with protective fullerene coatings were studied. Emission currents from a tungsten tip of about 50 µA were achieved. Field emission currents of the order of 100 mA from silicon multitip emitter with area of 0.25 sq cm were achieved.\",\"PeriodicalId\":328869,\"journal\":{\"name\":\"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)\",\"volume\":\"291 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BALD.2016.7886540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BALD.2016.7886540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了涂有保护富勒烯涂层的单尖端场致发射装置在技术真空条件下运行的可能性。从钨尖发射电流达到约50µa。从面积为0.25平方厘米的硅多针尖发射极中获得了100毫安量级的场发射电流。

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Protective coatings for tip field emitters operating at high voltages

The possibilities of operation in technical vacuum condition of single tip field emitters with protective fullerene coatings were studied. Emission currents from a tungsten tip of about 50 µA were achieved. Field emission currents of the order of 100 mA from silicon multitip emitter with area of 0.25 sq cm were achieved.

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2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)

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