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1995 53rd Annual Device Research Conference Digest最新文献

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Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor logic circuits 单片集成谐振隧道二极管和异质结构结场效应晶体管逻辑电路
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496270
J. Yen, Q. Zhang, M. Mondry, P. Chavarkar, E. Hu, S. Long, Utkarsh Mishra
{"title":"Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor logic circuits","authors":"J. Yen, Q. Zhang, M. Mondry, P. Chavarkar, E. Hu, S. Long, Utkarsh Mishra","doi":"10.1109/DRC.1995.496270","DOIUrl":"https://doi.org/10.1109/DRC.1995.496270","url":null,"abstract":"The use of resonant tunneling diodes in combination with three-terminal gain devices, such as HBTs or FETs, has been successfully realized, and these RTD+HBT and RTD+FET circuits exhibit strong potential for achieving higher integrated circuit densities and speed by exploiting the unique properties of RTDs. Heterostructure junction FETs (HJFETs) have comparable high performance to other heterostructure transistors with greater threshold reproducibility than conventional Schottky-gate heterostructure FETs and are simpler to manufacture than HBTs. We have developed a technology for fabricating monolithically integrated heterostructure junction field effect transistors (HJFETs) and resonant tunneling diodes (RTDs) from a single MBE sequence. Using this technology, we have constructed asynchronous logic and multivalued logic building block circuits.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"18 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120984216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers 垂直腔面发射激光器的偏振不稳定性和模式分配噪声
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496316
D. Kuksenkov, H. Temkin
{"title":"Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers","authors":"D. Kuksenkov, H. Temkin","doi":"10.1109/DRC.1995.496316","DOIUrl":"https://doi.org/10.1109/DRC.1995.496316","url":null,"abstract":"We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124329294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAs/GaAs graded superlattice channel transistors (GSTs) InAs/GaAs梯度超晶格通道晶体管(GSTs)
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496241
Y. Ando, A. Wakejima, I. Miura, W. Contrata, H. Miyamoto, N. Samoto
{"title":"InAs/GaAs graded superlattice channel transistors (GSTs)","authors":"Y. Ando, A. Wakejima, I. Miura, W. Contrata, H. Miyamoto, N. Samoto","doi":"10.1109/DRC.1995.496241","DOIUrl":"https://doi.org/10.1109/DRC.1995.496241","url":null,"abstract":"Pseudomorphic high electron mobility transistors (PHEMTs) offer superior power and noise performances compared to conventional HEMTs. However, as gate voltage increases, PHEMTs still suffer from parallel conduction of electrons in doped AlGaAs. This effect not only decreases transconductance (g/sub m/) at high gate bias but also degrades power gain and efficiency for large-signal operation. High indium content channel would allow an increase in conduction band offset, and hence, suppression of the parallel conduction, but due to the lattice mismatch, the reliability of the device might be affected, and therefore, the maximum allowable InAs mole fraction is limited. In this paper, we propose a graded superlattice channel transistor (GST), which reduces parallel conduction while suppressing an increase of strain in the channel.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125557028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency operation of 6-H SiC MESFETs at 6 GHz 6- h SiC mesfet在6 GHz的高效率工作
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496290
S. Sriram, R. Barron, A. Morse, T.J. Smith, G. Augustine, A. Burk, R. C. Clarke, R. Glass, H. Hobgood, P. A. Orphanos, R. Siergiej, C. Brandt, M. Driver, R. Hopkins
{"title":"High efficiency operation of 6-H SiC MESFETs at 6 GHz","authors":"S. Sriram, R. Barron, A. Morse, T.J. Smith, G. Augustine, A. Burk, R. C. Clarke, R. Glass, H. Hobgood, P. A. Orphanos, R. Siergiej, C. Brandt, M. Driver, R. Hopkins","doi":"10.1109/DRC.1995.496290","DOIUrl":"https://doi.org/10.1109/DRC.1995.496290","url":null,"abstract":"Summary form only given. SiC MESFETs are very promising candidates for RF power amplification, due to their unique combination of high saturation velocity, high breakdown strength, and high thermal conductivity. In the present work, we demonstrate for the first time high efficiency RF power operation at 6 GHz. We have obtained power output of 35 W, with 45.5% power added efficiency at 6 GHz from a 6-H SiC MESFET operating at a drain bias of 40 V. The gate length and width were 0.5 /spl mu/m and 2 mm respectively. The corresponding power density is 1.75 W/mm and is more than a factor of 3 higher than that obtained normally in GaAs. To our knowledge, these results represent the highest power output, efficiency, and operating frequency reported to date in SiC. The power MESFETs were fabricated on high resistivity SiC substrates grown at Westinghouse. Sintered Ni ohmic contacts, mesa isolation, and channel recessing using RIE were used in device fabrication. Air-bridge source interconnects were used for large periphery devices. The fabrication and characterization of these SiC power MESFETs are presented.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"24 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120872018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
40 GHz monolithic grid amplifier 40ghz单片栅格放大器
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496285
Cheh-Ming Liu, E.A. Sovero, D. Rutledge
{"title":"40 GHz monolithic grid amplifier","authors":"Cheh-Ming Liu, E.A. Sovero, D. Rutledge","doi":"10.1109/DRC.1995.496285","DOIUrl":"https://doi.org/10.1109/DRC.1995.496285","url":null,"abstract":"Summary form only given. A 36-element monolithic grid amplifier has been fabricated. The peak gain is 4 dB at 40 GHz with a 3-dB bandwidth of 800 MHz. We discuss the design and measurements for the monolithic grid amplifier. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116434652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Heterojunction organic thin-film transistors 异质结有机薄膜晶体管
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496300
A. Dodabalapur, H. Katz, L. Torsi, R. Haddon
{"title":"Heterojunction organic thin-film transistors","authors":"A. Dodabalapur, H. Katz, L. Torsi, R. Haddon","doi":"10.1109/DRC.1995.496300","DOIUrl":"https://doi.org/10.1109/DRC.1995.496300","url":null,"abstract":"We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125929056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical model of bit-to-bit variation in data retention time of DRAMs dram数据保留时间位对位变化的物理模型
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496313
M. Ogasawara, Y. Ito, M. Muranaka, Y. Yanagisawa, Y. Tadaki, N. Natsuaki, T. Nagata, Y. Miyai
{"title":"Physical model of bit-to-bit variation in data retention time of DRAMs","authors":"M. Ogasawara, Y. Ito, M. Muranaka, Y. Yanagisawa, Y. Tadaki, N. Natsuaki, T. Nagata, Y. Miyai","doi":"10.1109/DRC.1995.496313","DOIUrl":"https://doi.org/10.1109/DRC.1995.496313","url":null,"abstract":"The low power application of DRAMs requires longer data retention time. Since the p-n junction current leakage is the main cause of the cell capacitor discharge, the leakage should be minimized to meet the requirement. However, the leakage taking place in a small area varies from bit to bit. Therefore, it is necessary to clarify the mechanism of the variation for the leakage minimization. A physical model, based on newly obtained experimental results, is proposed wherein the leakage variation is mainly due to a variation of local electric field strength enhancement.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124371174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Population inversion in step quantum wells at 10 /spl mu/m wavelength 10 /spl μ m波长阶跃量子阱的居群反转
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496294
X. Zhang, G. Haddad, J. Sun, A. Kushaa, C. Sung, T. Norris
{"title":"Population inversion in step quantum wells at 10 /spl mu/m wavelength","authors":"X. Zhang, G. Haddad, J. Sun, A. Kushaa, C. Sung, T. Norris","doi":"10.1109/DRC.1995.496294","DOIUrl":"https://doi.org/10.1109/DRC.1995.496294","url":null,"abstract":"In this work, it is shown that population inversion can be achieved between subbands in a step quantum well with a high width ratio based on carrier capture processes. It is known that in quantum well structures, emission of LO phonons is the main carrier capture mechanism. The LO-phonon scattering rate depends on the Froelich matrix element and the overlap of the initial and final wave functions squared. In a step quantum well with a high ratio of the step width to the well width the wave function overlap of the state in the step and the state in the well is reduced and thus a longer capture time results. If the carriers of the state in the well can be removed by an adjacent quantum well by tunneling, population inversion can be realized.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131709008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High performance submicron-gate SiGe p-type modulation-doped field-effect transistors 高性能亚微米栅极sigep型调制掺场效应晶体管
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496232
M. Arafa, P. Fay, K. Ismail, J. Chu, B. Meyerson, I. Adesida
{"title":"High performance submicron-gate SiGe p-type modulation-doped field-effect transistors","authors":"M. Arafa, P. Fay, K. Ismail, J. Chu, B. Meyerson, I. Adesida","doi":"10.1109/DRC.1995.496232","DOIUrl":"https://doi.org/10.1109/DRC.1995.496232","url":null,"abstract":"High transconductance p-type field-effect transistors (FETs) are essential for the fabrication of high speed complementary circuits. Unfortunately, the much lower mobility of holes in comparison to electrons in Si has been responsible for the large gap between the performance of n-type and p-type devices. Recent advances in the growth of high quality SiGe has lead to structures with higher hole mobilities. This has been attributed to the light hole-heavy hole band splitting which results in less band mixing and a smaller in-plane effective mass. In this work, we report our work on the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127494511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of the tunnel MIS structure as a hot electron injector 热电子注入器隧道MIS结构的优化
1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI: 10.1109/DRC.1995.496314
I. Grekhov, A.F. Shulekin, M. Vexler
{"title":"Optimization of the tunnel MIS structure as a hot electron injector","authors":"I. Grekhov, A.F. Shulekin, M. Vexler","doi":"10.1109/DRC.1995.496314","DOIUrl":"https://doi.org/10.1109/DRC.1995.496314","url":null,"abstract":"Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114623893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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