{"title":"异质结有机薄膜晶体管","authors":"A. Dodabalapur, H. Katz, L. Torsi, R. Haddon","doi":"10.1109/DRC.1995.496300","DOIUrl":null,"url":null,"abstract":"We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heterojunction organic thin-film transistors\",\"authors\":\"A. Dodabalapur, H. Katz, L. Torsi, R. Haddon\",\"doi\":\"10.1109/DRC.1995.496300\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496300\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496300","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have developed a unique organic transistor structure which enables us to realize both p-channel and n-channel operation in a single device. This device also demonstrates the applicability of heterojunction concepts to organic semiconductors. The active material consists of two layers: the first layer, typically 10-20 nm thick, is made up of /spl alpha/-hexathienylene (/spl alpha/-6T), a thiophene oligomer which exhibits good p-channel operation. The second active material is C/sub 60/ and is about 20-30 nm thick. The energy levels of the occupied and unoccupied molecular orbitals of /spl alpha/-6T and C/sub 60/ are such that when the gate is biased negatively with respect to the source, the p-channel material is filled with holes and when the gate is biased positively, the n-channel material (C/sub 60/) is filled with electrons. A detailed analysis of the transistor characteristics provides important insights into transport in organic materials and is discussed.