{"title":"垂直腔面发射激光器的偏振不稳定性和模式分配噪声","authors":"D. Kuksenkov, H. Temkin","doi":"10.1109/DRC.1995.496316","DOIUrl":null,"url":null,"abstract":"We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers\",\"authors\":\"D. Kuksenkov, H. Temkin\",\"doi\":\"10.1109/DRC.1995.496316\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496316\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers
We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.
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