Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor logic circuits

Abstract

The use of resonant tunneling diodes in combination with three-terminal gain devices, such as HBTs or FETs, has been successfully realized, and these RTD+HBT and RTD+FET circuits exhibit strong potential for achieving higher integrated circuit densities and speed by exploiting the unique properties of RTDs. Heterostructure junction FETs (HJFETs) have comparable high performance to other heterostructure transistors with greater threshold reproducibility than conventional Schottky-gate heterostructure FETs and are simpler to manufacture than HBTs. We have developed a technology for fabricating monolithically integrated heterostructure junction field effect transistors (HJFETs) and resonant tunneling diodes (RTDs) from a single MBE sequence. Using this technology, we have constructed asynchronous logic and multivalued logic building block circuits.