热电子注入器隧道MIS结构的优化

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496314

I. Grekhov, A.F. Shulekin, M. Vexler

{"title":"热电子注入器隧道MIS结构的优化","authors":"I. Grekhov, A.F. Shulekin, M. Vexler","doi":"10.1109/DRC.1995.496314","DOIUrl":null,"url":null,"abstract":"Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of the tunnel MIS structure as a hot electron injector\",\"authors\":\"I. Grekhov, A.F. Shulekin, M. Vexler\",\"doi\":\"10.1109/DRC.1995.496314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

总结了针对不同器件应用的Al/SiO/sub /n-Si隧道结构参数优化的研究结果。最有前途的器件是俄歇晶体管——一种具有隧道式MIS发射极(热电子注入器)和反转基的双极晶体管，由于其输出特性具有高电流增益和双稳性。

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Optimization of the tunnel MIS structure as a hot electron injector

Summarizes results on optimisation of parameters of Al/SiO/sub 2//n-Si tunnel structures for different device applications. The most promising device is an Auger transistor-a bipolar transistor with tunnel MIS emitter (hot electron injector) and inversion base-due to high current gain and bistability of its output characteristics.

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1995 53rd Annual Device Research Conference Digest

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