{"title":"Polarization instability and mode partition noise in vertical-cavity surface-emitting lasers","authors":"D. Kuksenkov, H. Temkin","doi":"10.1109/DRC.1995.496316","DOIUrl":null,"url":null,"abstract":"We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present, for the first time, a study of polarization instability induced RIN (relative intensity noise) enhancement in VCSELs. Devices under study are nominally single-mode top-emitting GaAs/AlGaAs VCSELs with an operating wavelength of 850 nm. Current confinement and gain guiding are obtained by double proton implantation. Detailed results of bit error rate measurement on free-space optical links with polarization-unstable VCSELs and a rate-equation based model of the polarization instability are presented.