Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)最新文献

"Dry-to-the-touch" thermal grease “触感干燥”的导热润滑脂

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-14 DOI: 10.1109/ISAOM.2001.916581

P. Khatri, J. Ziemski

{"title":"\"Dry-to-the-touch\" thermal grease","authors":"P. Khatri, J. Ziemski","doi":"10.1109/ISAOM.2001.916581","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916581","url":null,"abstract":"Most thermal engineers believe that thermal greases (or heat sink compounds) provide the lowest thermal resistance of all thermal interface materials. Micro-faze/sup (R)/ is a proprietary design, dry-to-the-touch thermal grease product that offers the lowest thermal resistance at low closure force, thus eliminating the need to sacrifice thermal performance for convenience. This dry grease is totally adaptable to die-cut and possesses a natural tackiness that allows it to adhere to a component or heat sink without using adhesives that degrade thermal performance. The material also exhibits a positive CTE and its thixotropic properties allow it to wet surfaces, further improving interface contact. It is electrically insulating in one version. It is silicone-free in both versions so that contamination problems are avoided. With thermal management becoming ever more complex, engineers must measure the convenience of silicone elastomer thermal pads and more recent wax-based phase-change materials against the superior performance demonstrated by thermal grease. Although easy to use, thermal pads still show a relatively high thermal resistance; phase-change materials may perform better, yet bear limitations in performance. While grease offers superior performance, it can be messy and difficult to handle, thereby becoming labor intensive, making these considerations key factors in the rationale for product development. This paper describes a new thermal interface material that uses all of the advantages of grease replacements, with the lowest thermal resistance of actual thermal grease.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123693592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Advanced composites and other advanced materials for electronic packaging thermal management 用于电子封装热管理的先进复合材料及其他先进材料

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916602

C. Zweben

{"title":"Advanced composites and other advanced materials for electronic packaging thermal management","authors":"C. Zweben","doi":"10.1109/ISAOM.2001.916602","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916602","url":null,"abstract":"A variety of new advanced composites and other advanced materials are now available which provide great advantages over conventional materials for thermal management and microelectronic packaging, including: extremely high thermal conductivities (over three times that of copper); low, tailorable coefficients of thermal expansion; weight savings of up to 80%; size reductions of up to 65%; extremely high strength and stiffness; reduced thermal stresses; increased reliability; simplified thermal design; possible elimination of heat pipes; low cost, net shape fabrication processes; potential cost reductions. Composites and other advanced materials are in a state of continual development that undoubtedly will result in improved and new materials providing even greater benefits. The number of production applications is increasing rapidly, and these new materials are well on their way to becoming the 21st century materials of choice for thermal management and electronic packaging. This paper provides an overview of advanced composites and other materials used in thermal management and electronic packaging, including properties, applications and future trends. The focus is on materials having thermal conductivities at least as high as those of aluminum alloys. We also examine future trends.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126656437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 45

Effect of filler settling of underfill encapsulant on reliability performance 下填填料沉降对密封剂可靠性性能的影响

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916578

L. Fan, Zhuqing Zhang, C. Wong

{"title":"Effect of filler settling of underfill encapsulant on reliability performance","authors":"L. Fan, Zhuqing Zhang, C. Wong","doi":"10.1109/ISAOM.2001.916578","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916578","url":null,"abstract":"Flip chip technology has been evolving for some time, and underfill material has contributed a lot to its development. By filling the gap between silicon die and organic substrate, the polymeric underfill can dramatically enhance the reliability of the flip-chip device, as it couples the solder interconnection with die and substrate. Underfill materials are normally composed of a polymerizable/curable organic matrix, such as the epoxy/anhydride system, normally pre-filled with inorganic filler, such as silica. Filler settling is very likely to happen for silica of a much higher density than that of the organic matrix at typical processing temperatures. Pre-filling the underfill with silica filler would modify the overall properties of the underfill material, and filler settling within underfill would also result in completely different local material properties. This paper investigates the corresponding effect of silica-pre-filling as well as the potential consequence of filler settling on the reliability performance of the flip chip device and solder joint fatigue life under thermal cycle/shock conditions.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126760640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Overview of new packages, materials and processes 对新包装、新材料和新工艺的概述

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916539

K. Gilleo

{"title":"Overview of new packages, materials and processes","authors":"K. Gilleo","doi":"10.1109/ISAOM.2001.916539","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916539","url":null,"abstract":"Despite the chaotic 1990s packaging revolution there is no rest yet. The revolution's first decade made strides in conquering space by shifting to efficient area array. Minimal packaging reintroduced CSPs and flip chips in the quest to compress enver more on to a chip. Innovators invoked the third dimension to stack chips in high-rise fashion. Flex-based packages gained stature by shedding weight and height with 25 /spl mu/m films having lines and spaces approaching microns using vacuum-deposited metal. Flex-BGAs and micro-BGAs set high-density records, yet flex-based packaging is nearly 40 years old. MEMS (micro-electro-mechanical systems) then moved to center stage. The world's most complex machine, the Boeing 777, moved to second place when a MEMS device took the title with over 1 million parts. MEMS that can \"move, breathe, see, hear and think\", need new packaging. Optics then brought MOEMS (micro-opto-electro-mechanical systems) into the spotlight. The Internet giants embraced lightwaves, seeking MOEMS to catch the wave, and using micro mirrors to route light beams into cyberspace, but MOEMS demands a different package with real windows and no gates. This presentation gives an overview of these new packages, materials and process technologies.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122714478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Study on surface tension and adhesion for flip chip packaging 倒装芯片封装的表面张力和附着力研究

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916592

S. Luo, T. Harris, C. Wong

{"title":"Study on surface tension and adhesion for flip chip packaging","authors":"S. Luo, T. Harris, C. Wong","doi":"10.1109/ISAOM.2001.916592","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916592","url":null,"abstract":"In a flip chip package with underfill, adhesion of underfill to passivation and solder mask is critical to the reliability of the assembly. In this study, the three-liquid-probe method was used to investigate the surface properties of the solder mask and four different passivation materials, benzocyclobutene (BCB), polyimide (PI), silicon oxide (SiO/sub 2/), and silicon nitride (Si/sub 3/N/sub 4/), after different preparation procedures. A combination of both wet and dry clean processes was very effective for removal of contaminants from the surface. The oxygen atom, introduced during O/sub 2/ plasma treatment or UV/O/sub 3/ treatment, led to an increase of the base component of surface tension. X-ray photoelectron spectroscopy (XPS) experiments confirmed the increase of surface oxygen concentration after UV/O/sub 3/ treatment. Wetting of underfill on passivation and solder mask was slightly improved at higher temperatures. Although UV/O/sub 3/ cleaning and O/sub 2/ plasma treatment significantly improved the wetting of underfill on passivation materials, they did not show improvement in adhesion strength. As such, the wetting was not the controlling factor in adhesion of the system studied.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122013493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

The advantage of thin film technique in the application of spiral inductors and couplers [MCM] 薄膜技术在螺旋电感和耦合器中的应用优势[MCM]

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916607

J. Wolf, F. Schmuckle, D. Petter, T. Kasap, W. Heinrich, H. Reichl

{"title":"The advantage of thin film technique in the application of spiral inductors and couplers [MCM]","authors":"J. Wolf, F. Schmuckle, D. Petter, T. Kasap, W. Heinrich, H. Reichl","doi":"10.1109/ISAOM.2001.916607","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916607","url":null,"abstract":"Multi-chip modules for wireless communications in the microwave and mm-wave frequency range require carrier substrates with transmission lines of small size and well-controlled dimensions. RF multichip carrier substrates in thin-film technology allow realization of passive components like inductors and couplers off-chip from active circuits by direct integration on the substrate, thus reducing chip and substrate size and costs. Using at least two metallization layers, microstrip lines can be used as the line system, the properties of which are independent of the substrate due to the shielding effect. At the same time, the passives (inductors, couplers) are realized. Another advantage of the multi-layer thin-film scheme over single metallization-layer systems is the additional degree of freedom in line routing. Lange-type couplers, for instance, can be easily designed in a two-layer system without need for bonding. The paper provides an overview of some typical components which usually need bonding to join inner and outer connections and thus benefit from the two-metal-layer substrate.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129622527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel nanospring interconnects for high-density applications 用于高密度应用的新型纳米弹簧互连

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916604

Lunyu Ma, Qi Zhu, S. Sitaraman, C. Chua, D. Fork

引用次数: 2

Pb-free solder paste reflow window study for flip chip wafer bumping 用于倒装晶圆碰撞的无铅焊膏回流窗口研究

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916559

Li Li, Y. Rao, Jong-Kai Lin

{"title":"Pb-free solder paste reflow window study for flip chip wafer bumping","authors":"Li Li, Y. Rao, Jong-Kai Lin","doi":"10.1109/ISAOM.2001.916559","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916559","url":null,"abstract":"A 2/spl times/3 full factorial experimental design was used to study the effects of peak reflow temperature (235/spl deg/C-265/spl deg/C) and time-above-liquidus (40-60 s) on bump characteristics. Ultra-fine mesh (type 5, -500/+650) Pb-free solder pastes, including Sn96.5Ag3.5, Sn95.5Ag3.8Cu0.7, and Sn99.3Cu0.7 were used on electroless NiP/Au under bump metallurgy (UBM). Belt speed and zone temperature settings of a reflow furnace were used to obtain the desired profiles. A linear ramp profile, with ramp rate of 1.5/spl deg/C/sec was selected after initial profile screening experiments. The reflowed solder bumps were characterized in several categories to obtain an optimal reflow window. These categories included wetting characteristics, solder bump shear strength, shear failure mode, flux residue cleanliness, solder void population, and void size. The lowest peak reflow temperature and time-above-liquidus were established for each solder alloy. A low peak temperature reflow (cooler profile) resulted in fewer and smaller voids in the solder bump than a high temperature, long time-above-liquidus reflow condition. Bump shear strength was consistent for a wide range of reflow conditions. All three Pb-free solders have a reflow process window to bumps with good solder/UBM integrity and uniform bump geometry.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129157511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Wet etch stop resist evaluation for MCM-D packaging MCM-D包装的湿蚀刻防蚀性能评估

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916553

T. Demercurio, D. Mcherron

{"title":"Wet etch stop resist evaluation for MCM-D packaging","authors":"T. Demercurio, D. Mcherron","doi":"10.1109/ISAOM.2001.916553","DOIUrl":"https://doi.org/10.1109/ISAOM.2001.916553","url":null,"abstract":"An investigation was carried out to evaluate positive resists which would be used in subtractive etching of Cr and Cu in MCM-D applications. This resist must be able to withstand the alkaline and acidic chemistries used in the metal etch solutions. It must meet certain spin application requirements in order to produce a uniform and consistent coating. It also must be compatible with an alkali metal hydroxide develop chemistry. Another requirement is the ability of the resist to tolerate a large soft-bake temperature range. These stipulations are, in part, necessary to provide a robust MCM thin film interconnect build process. This paper shows results collected on a variety of commercially available novolac based positive resists. Their photolithographic properties, including spin application observations, soft bake temperature effect on unexposed developer etch rates, contrast, and minimum dose effects are discussed. This paper gives observations on the performance of the resists in the metal etch solutions. The capability of some of these resists in Al etching is also discussed. The results of loss of resist adhesion during Al etch are shown. Bake parameter effects on resist adhesion in the Al etch bath are presented. Selection of a resist to meet overall thin film MCM process requirements often involves a trade-off between several resist characteristics. This selection process is discussed.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121148797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High temperature degradation mechanism of conductive adhesive/Sn alloy interface 导电胶粘剂/锡合金界面高温降解机理研究

Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562) Pub Date : 2001-03-11 DOI: 10.1109/ISAOM.2001.916542

E. Suganuma, M. Yamashita

引用次数: 2