2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems最新文献

{"title":"Thermo-mechanical investigation of the reliability of embedded components in PCBs during processing and under bending loading","authors":"B. Atli-Veltin, H. Ling, Susan Zhao, S. Noijen, J. Caers, Liu Weifeng, G. Feng, Ye Yuming","doi":"10.1109/ESIME.2012.6191742","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191742","url":null,"abstract":"FE models were developed to investigate the effect of processing and 3PB on the mechanical reliability of the embedded components. The results focus on the central region of resistor and capacitor. Local effects around the vias or copper layers are not considered. During processing, after processing and after bending compressive stresses are observed on both the embedded capacitor and the resistor. These results indicate that the risk of cracking on the components is low; however, the compressive stresses should be compared to the critical compressive stress limits of these materials. Similar results were obtained for the capacitor and the resistor. Due to the difference in the material properties (mainly CTE) higher compressive stresses are observed in the Alumina (resistor) compared to the Ceramic (capacitor). During processing, cooling causes the horizontal compressive stresses to increase, and heating causes them to decrease. Before the PCB is subjected to 3PB, the components possess compressive stresses which are caused by the lamination process. This is an advantage of the embedded components over a surface mounted component, where tensile stresses occur on the components. The 1mm bending loading causes the horizontal compressive stresses to reduce slightly. Bending the strip to 20 mm still does not cause the horizontal compressive stresses to diminish. The overall conclusion is that embedding the components is favorable to mounting a component on the surface of a PCB with respect to risk for component cracks. A high stiffness region was included in the model to represent the fiber glass around the components. This model was subjected to lamination process. The results show that the compressive stresses occurring on the components due to lamination is slightly affected by this region. Overall conclusions do not change with existence of a stiffer area above the components.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130170316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stress chip measurements of the internal package stress for process characterization and health monitoring","authors":"F. Schindler-Saefkow, F. Rost, A. Otto, W. Faust, B. Wunderle, B. Michel, S. Rzepka","doi":"10.1109/ESIME.2012.6191746","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191746","url":null,"abstract":"The experimental observation of the actual thermo-mechanical weak points in microelectronics packages remains a big challenge. Recently, a stress sensing system has been developed by the publicly funded project that allows measuring the magnitudes and the distribution of the stresses induced in the silicon dies by thermo-mechanical loads. The paper reports investigations on industrial QFN packages of 6×6×1mm3 in size. The stress field has been recorded before and after soldering the component to the PCB as well as during thermal cycle and bending tests. Onset and evolution of internal damages have been detected by changes in the stress at the chip surface due to degradations of materials or interfaces within the course of the thermal cycling test. Applying 3-D x-ray computer tomography, the damages inside the packages have been validated at several stages during the test. All measurements are supplemented by finite element simulations based on calibrated models for in-depth analysis and for extrapolating the stress results to sites of the package that are not measured directly. The methodology of closely combining stress measurements and FE simulation presented in this paper has been able to validate the stress sensing system for tasks of comprehensive design and process characterization as well as for health monitoring. It allows achieving both, a substantial reduction in time-to-market and a high level of reliability under service conditions, as needed for future electronics and smart systems packages.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131827589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear analyses of semi-embedded through-silicon via (TSV) interposer with stress relief gap under thermal operating and environmental conditions","authors":"J. Lau, Shang-Tsai Wu, H. Chien","doi":"10.1109/ESIME.2012.6191796","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191796","url":null,"abstract":"In this study, 3D IC integrations with a semi-embedded TSV interposer with stress relief gap under thermal operating and environmental conditions are investigated. Emphasis is placed on the determination of the TSV interposer warpage and the nonlinear stress and creep strain in the Al/Cu-low-k pads and micro solder joints.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131851736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polymer-based 2D/3D wafer level heterogeneous integration for SSL module","authors":"C. Yuan, Jia Wei, H. Ye, S. Koh, S. Harianto, M. van den Nieuwenhof, G. Zhang","doi":"10.1109/ESIME.2012.6191808","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191808","url":null,"abstract":"This paper demonstrates a heterogeneous integration of solid state lighting (SSL) module, including light source (LED) and driver/control components. Such integration has been realized by the polymer-based reconfigured wafer level package technologies and such structure has been prototyped and tested. The structure design, thermal design consideration, material selection & process technologies, and mechanical challenges will be also described in this paper.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133291297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accelerated testing method of LED luminaries","authors":"M. Cai, D. Yang, S. Koh, C. Yuan, W. B. Chen, B. Wu, G. Zhang","doi":"10.1109/ESIME.2012.6191777","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191777","url":null,"abstract":"With rapid development of lighting emitting diode (LED) market, more people are focusing on reliability testing method of LED luminaries system. However, it is difficult to use traditional reliability testing method for electronic products to assess LED luminaries with high reliability and long life. In this paper, reliability testing methods applied on LED, LED luminaries and other fields are reviewed shortly, and step stress accelerated life test (SSALT) and step stress accelerated degradation test (SSADT) are selected for exploring reliability testing on commercial available LED systems. According to special characteristic of LED system and advantage of each method, both of methods are combined into one testing plan for evaluating system life. Proposed methods are also conducted on one thermal testing example by focused on commercial available LED bulb and lamp-cup systems. Explored results suggest that step stress accelerated test is an effective accelerated test method for LED luminaries. At the same time, there are still many challenging aspects for system reliability test, such as complicated failure mechanisms, Life gap among subsystems and also product manufacturers and lack of appropriate models to extrapolate. To assess the system reliability in future, an assessment procedure to subsystems is proposed by combining mentioned step stress accelerated test and system statistics analysis methodologies recommended in recent literature.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122248416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of chip temperature related to various copper thickness on glass-fabric-based substrate","authors":"Jin-Ju Chue, Chih-Chyau Yang, Chen-Chia Chen, Chun-Chieh Chiu, Chien‐Ming Wu, Chun-Ming Huang","doi":"10.1109/ESIME.2012.6191709","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191709","url":null,"abstract":"This paper presents an investigation of analyzing various thickness of “thermal functioned” copper layers on glass-fabric-based printed circuit board (PCB). To pursue the optimum thermal solution, two strategies are proposed for improving the heat dissipation ability on PCB and reducing copper amount usage. The first one is optimizing the thermal functioned copper layer position. By analyzing different locations of copper layer, top position attains the best heat dissipation efficiency. The other one is obtaining the best cross section profile of copper thickness. Different from common uniform copper thickness, a novel various copper thickness profile model is built for heat dissipation on PCB. By monitoring chip temperature, results show that the ability of heat dissipation is advanced by proposed various thickness of the thermal-function copper layer. Comparing to uniform copper layer thickness, the proposed various copper thickness profile efficiently cools down the 0.45-W power consuming chip by 2~5 degrees with the same copper amount usage. Results show that proposed various copper thickness profile owns both benefits of higher heat dissipation ability and lower copper usage.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122277147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parameter optimization of torque wireless sensors based on surface acoustic waves (SAW)","authors":"E. Zukowski, T. Fellner, J. Wilde, M. Berndt","doi":"10.1109/ESIME.2012.6191744","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191744","url":null,"abstract":"This paper demonstrates our approach for the design optimization of wireless torque sensor with FE simulation tools. Such a system comprises the SAW transducer, a torque transfer clip and the machine's shaft. The design process was based on construction, modelling and simulation. In order to optimise the performance, the SAW device, the bonding material and the clip were regarded.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"422 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127790994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation of the frequency response of a thermal flow sensor in gaseous media","authors":"D. Reyes-Romero, G. Urban","doi":"10.1109/ESIME.2012.6191728","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191728","url":null,"abstract":"The frequency response of a calorimetric flow sensor is simulated for many selected gases. The effect of selected thermal properties of the gas on the frequency response is analyzed. The thermal conductivity is found to be the dominant parameter on the cut-off frequency of the sensor. This influence seems to be linear in nature. Moreover, the influence of the flow speed on the frequency response is also found to be much smaller than that of the thermal conductivity.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114968239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studies on the transitional behaviors of Au-to-Au micro-contact during the initialization stage of contact formation under low contact force","authors":"H. Qiu, Hong Wang, F. Ke","doi":"10.1109/ESIME.2012.6191804","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191804","url":null,"abstract":"In nowadays, ohmic-contact MEMS switches have been widely studied due to their variously advantages, such as high isolation, low insertion loss, negligible power consumption and so on. The micro-contact behavior has been analyzed by several researchers using the conventional asperity deformation model, in which the electrical contact resistance decreases gradually with increasing contact force and finally reaches a saturation region. This paper presents a study of the instable region of micro-contact behaviors under low contact force and low current conditions, where the conventional model does not seems to be applicable. Random telegraph signals (RTS) were captured during the transition period before the establishment of stable electrical contact. An electrothermal approach was applied in our work and the time constants of the RTS during instable region are extracted statistically from the experimental data. The fundamental mechanism for the contact resistance instabilities were discussed under the framework of material transfer enhanced by localized Joule heating.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128268277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelling of temperature distribution in thermal microsensors on sandwich thermally isolated structures","authors":"A. Kozlov, D. Randjelović","doi":"10.1109/ESIME.2012.6191765","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191765","url":null,"abstract":"The paper presents a modelling of temperature distribution in the sandwich thermally isolated structures used in thermal microsensors. The two cases are considered: 1) the temperature distribution along the thickness of a thermally isolated structure; 2) the temperature distribution over the area of a thermally isolated structure. The basis for modeling is the eigenfunction method which is modified for the structure including several regions with homogeneous parameters. The model is applied to the concrete microsensors with sandwich thermally isolated structure. The relative error in determining the temperature distribution in replacing the two-layer structure (Si/SiO2) by the structure with homogeneous parameters is evaluated. The temperature distributions in the regions with the thermopiles and heater and along the line of disposition of hot thermojunctions of the thermopile are determined.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127658862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}