2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems最新文献

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Establishing the interfacial fracture properties of Cu-EMC interfaces at harsh condition 建立Cu-EMC界面在恶劣条件下的界面断裂特性
M. Sadeghinia, K. Jansen, L. Ernst, H. Pape
{"title":"Establishing the interfacial fracture properties of Cu-EMC interfaces at harsh condition","authors":"M. Sadeghinia, K. Jansen, L. Ernst, H. Pape","doi":"10.1109/ESIME.2012.6191739","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191739","url":null,"abstract":"Delamination in interfaces is one of the failure modes in microelectronic products. In order to be able for judging the risk of interface fracture, the critical interfacial fracture properties should be established. Moisture, temperature and mode mixity have significant effect on the interfacial toughness. Dealing with the moisture effect the highest temperature was limited to 100°C. This limitation is quite restrictive for the application of the obtained critical fracture data for reliability studies of microelectronic packages. This is because of the fact that for pre-moisturized microelectronic packages the interface delamination failure often occurs above this temperature limit. The present research focused on the establishing the critical interfacial fracture properties of epoxy molding compound-copper leadframes in the pressurized steam condition i.e. temperature larger than 100°C and 100% RH. Dealing with it, a special steam chamber is designed and developed. The setup is completed by installing a CCD camera for tracking the crack growth along the interface.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115709939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of conversion level on simulation results of crosslinked polymers 转化水平对交联聚合物模拟结果的影响
S. Tesarski, A. Wymyslowski, O. Holck
{"title":"Influence of conversion level on simulation results of crosslinked polymers","authors":"S. Tesarski, A. Wymyslowski, O. Holck","doi":"10.1109/ESIME.2012.6191759","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191759","url":null,"abstract":"In modern world there is a tendency to miniaturize electronic devises, to do so a new materials with dedicated physical properties are needed. When we look on overall materials used in microelectronic, majority of them are polymers. It is due to the fact that there is a big variety of them and mixing them could change their physical properties significantly. On the other hand new products require shorter time-to-market. This induces a need for shorten R&D process. Experimental research is time and money consuming. Using Advanced Computer Techniques it is possible to shorten R&D time for example by running parallel simulations. It is obvious that in a selected group of materials with the best properties, it is necessary to conduct experimental validation of them. As the computer simulation only gives a tendency or trend rather than exact numerous values. Molecular modeling is such tool that provides a possibility of extracting properties of polymers materials. In this paper the authors focused on crosslinked polymers used as moulding compounds in electronic packaging. The knowledge on thermo-mechanical properties of molding compounds is essential in order to provide reliability of the microelectronic devices on satisfactory level. The model of commonly used polymer as moulding compound was created, in previous works authors used 100% crosslink model. Authors with the awareness that in the real world so high conversion rate is never achieved introduces partially conversed model. Although the simulation in nano-scale are more accurate but they need significantly more CPU power, for this reason the authors as an alternative also introduced modeling in meso-scale. The results are promising.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127526730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure modeling of BGA package for reliability evaluation of handheld products under drop event 手持式产品掉落事件下BGA封装可靠性评估失效建模
Soonwan Chung, J. Kwak, Seunghee Oh, Changsun Kang
{"title":"Failure modeling of BGA package for reliability evaluation of handheld products under drop event","authors":"Soonwan Chung, J. Kwak, Seunghee Oh, Changsun Kang","doi":"10.1109/ESIME.2012.6191799","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191799","url":null,"abstract":"In this paper, the failure modeling of BGA(Ball Grid Array) package is studied to evaluate the drop impact reliability of handheld products. In order to perform explicit full FEA modeling of handheld products, it costs large amount of computing time due to large aspect ratio of element size between solder interconnects and the other structures in a product. However, the conventional simple FEA modeling is too limited to simulate actual behavior of solder joint during impact. Thus, in this study, the effective way to represent solder interconnect for FEA is considered relatively simpler yet detailed. The assembly composed of BGA package and PCB is considered to assess the feasibility of solder ball failure modeling during drop impact loading applied. Especially for the modeling of solder balls, detailed solid model and simple beam model are compared in view of computational efficiency and numerical accuracy. Consequently, board-level drop tests are conducted after preparing various test jigs, which are implemented to apply different loading condition to BGA package. The results shows different drop impact life for solder interconnects depending on the test jig type. In the conclusion, the feasibility of beam model for solder balls is shown by correlating the stress level and drop impact life obtained from the experiments.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An approach to life consumption monitoring of solder joints in operating temperature environment 工作温度环境下焊点寿命消耗监测方法研究
J. Johansson, I. Belov, E. Johnson, P. Leisner
{"title":"An approach to life consumption monitoring of solder joints in operating temperature environment","authors":"J. Johansson, I. Belov, E. Johnson, P. Leisner","doi":"10.1109/ESIME.2012.6191699","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191699","url":null,"abstract":"This paper elaborates the 3T-approach to life consumption monitoring of solder joints in operating temperature environment without requiring simplification of operating loads. An overview of the 3T-approach is provided including assumptions made for a proposed realization in an avionic application. Associated implementation routines are highlighted and exemplified for a lead-free PBGA256 package with creep strain energy density (SEDcr) as damage metric. Factors that affect the prediction accuracy are investigated. A data resolution has been determined that delivers response surfaces that provide results comparable to 3-D finite-element (FE) simulations, while bearing two orders of magnitude higher computational efficiency. A stress-free temperature modification routine is proposed and proves to further mitigate accuracy problems.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128398120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
3-D finite elements simulation of drop test reliability on a Chip Scale Package: Focus on the component architecture and materials 芯片级封装上跌落试验可靠性的三维有限元模拟:重点关注组件架构和材料
S. Belhenini, A. Bouchou, F. Dosseul, A. Tougui
{"title":"3-D finite elements simulation of drop test reliability on a Chip Scale Package: Focus on the component architecture and materials","authors":"S. Belhenini, A. Bouchou, F. Dosseul, A. Tougui","doi":"10.1109/ESIME.2012.6191717","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191717","url":null,"abstract":"Chip Scale Package (CSP) fulfills the demand for small, light and portable handheld electronic devices and is one of the most advanced packaging concepts. Reliability of this package becomes more critical since their solder joins endure harsh mechanical loads such as drop impact during transportation or operations. Cracking of solder interconnections is often caused by excessive bending of circuit board subject to input acceleration created from dropping handled electronic products. It is known that the dynamic strains and stress states of solder bumps directly affect their reliability during drop impact. In this paper, 3-D finite-elements calculations have been carried out to analyze the effects of chip thickness, Through-Silicon-Vias TSV dimensions and material properties on a new 3D chip scale package (CSP) behavior during an impact. TSVs distribution effect is discussed, two cases have been modeled : bumps located on TSVs and bumps located with an offset in regards with TSV s position. The behavior under shock loading conditions has been analyzed to determine the stress and strain concentration areas. These numerical results will be exploited in fatigue prediction law. Numerical results show that the maximum plastic strain in the bump decreases with the chip thickness. For 0.1 mm Silicon thickness, stress and strain localization and amplitude depend on the TSVs distributions. Bumps on TSVs configuration leads to stress concentration areas around and between VIAs. In the second configuration stress concentration areas are minimized. A comparison between Copper and PolySilicon VIAs shows that the second material gives better results in terms of plastic deformation. In all configurations, the critical position is localized, as expected, at the corner bump.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128741543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PZT piezoelectric coefficient extraction by PZT-actuated micro-beam characterization and modeling 基于PZT驱动微梁特性与建模的压电系数提取
F. Casset, M. Cueff, A. Suhm, G. Le Rhun, J. Abergel, M. Allain, C. Dieppedale, T. Ricart, S. Fanget, P. Renaux, D. Faralli, P. Ancey, A. Devos, E. Defay
{"title":"PZT piezoelectric coefficient extraction by PZT-actuated micro-beam characterization and modeling","authors":"F. Casset, M. Cueff, A. Suhm, G. Le Rhun, J. Abergel, M. Allain, C. Dieppedale, T. Ricart, S. Fanget, P. Renaux, D. Faralli, P. Ancey, A. Devos, E. Defay","doi":"10.1109/ESIME.2012.6191704","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191704","url":null,"abstract":"In this paper, we showed the realization and the characterization of a PZT-actuated micro-cantilever. The measurement and the modeling of its resonant frequency allow deducing the cantilever length. Using this value and combining the measurement and the modeling of the cantilever displacement amplitude at a given voltage, we extract PZT d31 piezoelectric coefficient as being 165±25 pm/V; which is among the highest values ever published for PZT thin films. It is worth noting that d31 is homogenous throughout the whole 200mm wafer.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129257477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Material characterization to model linear viscoelastic behavior of thin organic polymer films in microelectronics 微电子领域有机聚合物薄膜线性粘弹性特性模型的材料表征
K. Unterhofer, H. Preu, J. Walter, G. Lorenz, W. Mack, M. Petzold
{"title":"Material characterization to model linear viscoelastic behavior of thin organic polymer films in microelectronics","authors":"K. Unterhofer, H. Preu, J. Walter, G. Lorenz, W. Mack, M. Petzold","doi":"10.1109/ESIME.2012.6191710","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191710","url":null,"abstract":"In microelectronic packaging technologies organic thin film materials, e.g. photo resists acting as dielectric layers or solder masks, gain more and more importance due to trends towards miniaturization and high system integration. Therefore, a profound characterization of these materials is an important issue for reliable FEM simulations and improved process control. In this paper, viscoelastic material behavior of dielectric polymer thin films is characterized in time and frequency domain and implemented into ANSYS. The FEM results are compared to relaxation experiments for consistency check and it was found that material models from frequency data simulate a stiffer long term material behavior compared to data from time domain. The latter showed good agreement with accordant experiments. In addition to the standard macroscopic material characterization methods we initiated the steps towards a local microscopic material characterization method on device level using nanoindentation technique. The indentation creep compliance of organic thin films was measured and compared to standard methods. The advantage of analyzing in a small volume scale is to consider material characteristics of real processed thin films with thermal load histories as they appear in final products.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124575974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Reliability and functionality investigation of CFRP embedded ultrasonic transducers supported by FEM and EFIT simulations 基于有限元和EFIT模拟的CFRP嵌入式超声换能器可靠性和功能性研究
M. Roellig, F. Schubert, G. Lautenschlaeger, M. Franke, B. Boehme, N. Meyendorf
{"title":"Reliability and functionality investigation of CFRP embedded ultrasonic transducers supported by FEM and EFIT simulations","authors":"M. Roellig, F. Schubert, G. Lautenschlaeger, M. Franke, B. Boehme, N. Meyendorf","doi":"10.1109/ESIME.2012.6191764","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191764","url":null,"abstract":"An emerging trend in modern structure design is the combination of structures and sensors in order to measure environmental conditions and to evaluate structural integrity. One possible approach of this Structural Health Monitoring (SHM) paradigm is based on ultrasonic guided waves or Lamb waves. These elastic waves interact with damages inside the structure and the evaluation of their echo response permits damage identification and localization. Typical applications are rotor blades of wind turbines made of GFRP1 and aircraft components made of CFRP2. The sensor nodes consist of small piezo transducers and sensor near electronics for signal processing, power supply, and wireless communication. The high demands for lifetime and reliability of the structure are directly transferred to the electronic microsystem. The authors are working on a novel approach to embed the sensor nodes into CFRP structures. Functionality, manufacturability and reliability were experimentally investigated and supported by numerical simulations. For this purpose material characterization of the layered composite structures has been conducted to provide material data for the calculations. Finite Element Simulations help to understand the structural mechanics during simultaneous sensor embedding and CFRP-lamination and were also applied to risk estimation in terms of sensor and electronics reliability. The Elasto-dynamic Finite Integration Technique (EFIT) was applied to study guided wave propagation inside multilayered CFRP-structures and to determine the directivity pattern of sensors laminated inside or on the surface of CFRP panels. Various sensor integration concepts were modeled to study their influence on guided wave performance and sensitivity. Finally, the numerical results were compared to experimental wave field measurements based on non-contact laser vibrometry.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123473122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical and experimental results correlation during power MOSFET ageing 功率MOSFET老化过程中数值与实验结果的相关性
T. Azoui, P. Tounsi, P. Dupuy, J. Dorkel, D. Martineau
{"title":"Numerical and experimental results correlation during power MOSFET ageing","authors":"T. Azoui, P. Tounsi, P. Dupuy, J. Dorkel, D. Martineau","doi":"10.1109/ESIME.2012.6191798","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191798","url":null,"abstract":"This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization aging of source terminal. The numerical results were correlated with experiment based on past study.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"91 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114638791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Testing and multi-scale modeling of drop and impact loading of complex MEMS microphone assemblies 复杂MEMS麦克风组件跌落和冲击载荷的测试和多尺度建模
J. Meng, T. Mattila, A. Dasgupta, M. Sillanpaa, R. Jaakkola, K. Andersson, E. Hussa
{"title":"Testing and multi-scale modeling of drop and impact loading of complex MEMS microphone assemblies","authors":"J. Meng, T. Mattila, A. Dasgupta, M. Sillanpaa, R. Jaakkola, K. Andersson, E. Hussa","doi":"10.1109/ESIME.2012.6191726","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191726","url":null,"abstract":"Failure under dynamic mechanical stresses caused by impact and drop loading is a critical concern for reliability of surface mount components in portable electronic products. This study focuses on drop-induced failures in system-in-package (SIP) COTS Micro-Electro-Mechanical Systems (MEMS) components that are mounted on PWAs. In particular, we are interested in the effects of secondary impacts that can occur between the PWB and neighboring structures (such as the product case, battery packs, displays or other adjacent PWBs) in portable electronic products. Drop tests are conducted under highly accelerated drop conditions with ultra-high accelerations (10,000-30,000 Gs) that generate stress levels well beyond those expected in actual use, or in conventional qualification tests. Furthermore, secondary impacts are allowed between the test specimen and the fixture, resulting in additional amplifications of stress and accelerations. Due to the geometric complexity, a hierarchical, multi-scale global-local modeling approach is used to assess the stress levels at critical failure sites in the MEMS. The modeling is based on 3D transient Finite element analysis (FEA).","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124055100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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