2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems最新文献

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Thermal modelling and optimisation of hot solder dip process 热浸焊工艺的热建模与优化
S. Stoyanov, C. Bailey, P. Tollafield, R. Crawford, M. Parker, J. Scott, J. Roulston
{"title":"Thermal modelling and optimisation of hot solder dip process","authors":"S. Stoyanov, C. Bailey, P. Tollafield, R. Crawford, M. Parker, J. Scott, J. Roulston","doi":"10.1109/ESIME.2012.6191763","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191763","url":null,"abstract":"The use of electronic components with coated lead-free solder terminations in high reliability and safety products and equipment has risks for their long-term reliability caused by tin-wicker growth phenomena. A potential solution to this problem is to “re-finish” the package leads by removing the tin coating from terminations and replace with conventional tin-lead solder in a post-manufacturing process known as hot solder dip (HSD). This work presents a simulation driven approach to the characterisation of hot solder dipping, evaluation of process effect on parts' temperature gradients and heating/cooling rates, and addresses the advantages of applying an efficient model based process optimisation. Transient thermal finite element analysis is used to evaluate the temperature distribution in a Quad Flat Package (QFP) during a double-dip hot solder dipping process developed by Micross Components Ltd. A full detailed three-dimensional model of the 208-pin 0.5 mm pitch component is developed using comprehensive characterisation of the package structure and materials based on X-Ray, SEM-EDX, cross-sectional metallurgy and 3D CT scan. Thermo-coupled measurements are compared with model temperature predictions. Model and experimental results have been used to inform the process optimisation strategy. Optimised process settings resulting in temperature ramp rates at die level within recommended manufacture's limit are identified.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124142380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A comparison study of the prognostics approaches to Light Emitting Diodes under accelerated aging 加速老化下发光二极管预测方法的比较研究
Thamo Sutharssan, C. Bailey, S. Stoyanov
{"title":"A comparison study of the prognostics approaches to Light Emitting Diodes under accelerated aging","authors":"Thamo Sutharssan, C. Bailey, S. Stoyanov","doi":"10.1109/ESIME.2012.6191783","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191783","url":null,"abstract":"Light Emitting Diode (LED) lighting systems are being implemented as a future light source in many sectors. They have advantages such as power efficiency, higher reliability, small in size, faster switching speed, etc. Previous research has shown that same types of LEDs, from same manufacturer may have significantly different characteristics and behaviour under similar operating condition. These findings indicate the difficulties in assessing and maintaining the LED lighting systems in the field after their deployment, particularly in the case of safety critical, emergency and harsh environment applications. This paper demonstrates two different prognostics and health management (PHM) approach namely data driven and model driven approach to assess the reliability and predict the remaining useful lifetime (RUL) of LED lighting systems in the field. Focus of this paper is to compare the performance of these two different modelling approaches under thermal and electrical overstress conditions. Results indicate the predictions made by model driven and data driven approach are within the reasonable limit and hence they can be used to predict the catastrophic failures caused by the thermal and electrical overstress in the field. Both techniques gain accuracy as time progresses and make better prediction closer to failure. This paper will also propose a fusion based approach to increase the accuracy of the prediction at the early stage of use. This will provide benefits in terms of planning and maintenance for large scale LED deployment especially in the safety critical applications.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Measurement and simulation of moisture effects on electromagnetic radiation of printed circuit boards 湿度对印刷电路板电磁辐射影响的测量与模拟
H. Fridhi, G. Duchamp, V. Vigneras, A. Guédon-Gracia, J. Delétage, H. Frémont
{"title":"Measurement and simulation of moisture effects on electromagnetic radiation of printed circuit boards","authors":"H. Fridhi, G. Duchamp, V. Vigneras, A. Guédon-Gracia, J. Delétage, H. Frémont","doi":"10.1109/ESIME.2012.6191795","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191795","url":null,"abstract":"In this paper the effect of humidity aging on the electromagnetic radiation behavior of a printed circuit board is presented. Experimental study of the aging effect on the losses in electromagnetic radiation of the test structure was performed using a near field test bench. The samples were aged at various levels of temperature and aging times were used to measure the water absorption and the degradation of conductor's roughness surface. Numerical simulations were conducted to explore the root cause and try to validate the experimental measurements. A simulation method was established to simulate the impact of the water absorption and conductor's surface roughness.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127765028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications 基于仿真的半导体互连系统可靠性和鲁棒性预测
M. Ackermann, V. Hein, K. Weide-Zaage
{"title":"Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications","authors":"M. Ackermann, V. Hein, K. Weide-Zaage","doi":"10.1109/ESIME.2012.6191800","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191800","url":null,"abstract":"The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134041973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Consistent analytical model for single and dual thickness capacitive Micromachined Ultrasound Transducers (cMUT) 单、双厚度电容式微机械超声换能器(cMUT)的一致性分析模型
X. Rottenberg, A. Erişmiş, P. Czarnecki, P. Hélin, A. Verbist, H. Tilmans
{"title":"Consistent analytical model for single and dual thickness capacitive Micromachined Ultrasound Transducers (cMUT)","authors":"X. Rottenberg, A. Erişmiş, P. Czarnecki, P. Hélin, A. Verbist, H. Tilmans","doi":"10.1109/ESIME.2012.6191803","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191803","url":null,"abstract":"Capacitive Micromachined Ultrasound Transducers (cMUTs) are recognized as key enablers for emerging applications of ultrasound waves in gaseous, liquid and solid-state media, from positioning/ranging to medical treatment, through actuation, levitation, drug delivery, bio-sensing. This paper presents an improved consistent model for cMUTs implementing uniform or bossed membranes in transmit and receive modes. Key in our model are the consistent description of the mechanical modal resonant equivalent circuit and the transduction between electrical, mechanical and acoustic domains as well as the proper description of the acoustic load, not only resistive but also inductive, and thus the accurate representation of the frequency drift introduced by the medium supporting the propagation. In particular, we demonstrate, through comparison with FEM simulations, the accuracy of the model to define the center frequency, 3dB-fractional bandwidth and output pressure levels of cMUTS.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130837652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation of diffusion controlled intermetallic formation of Au/Al interface 扩散控制Au/Al界面金属间形成的模拟
Rui Huang, Y. Y. Tan, J. Walter, H. Pape, Xuejun Fan, H. Koerner
{"title":"Simulation of diffusion controlled intermetallic formation of Au/Al interface","authors":"Rui Huang, Y. Y. Tan, J. Walter, H. Pape, Xuejun Fan, H. Koerner","doi":"10.1109/ESIME.2012.6191791","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191791","url":null,"abstract":"This paper describes the finite element simulation for diffusion controlled intermetallic formation of Au/Al interface during the wire bonding process. The analogous correlation between the intermetallic atomic diffusion and the heat transport is introduced, and the simulation of intermetallic diffusion using a commercial finite element method (FEM) tool ANSYS is demonstrated. Phase dependent diffusivities have been implemented into the material model in order to more accurately model the distribution of diffusing atomic concentration. The various phases of intermetallic compounds (IMCs) can be determined briefly by the obtained atomic concentration profile from FEM and the phase composition table. The overall thickness of the IMCs layer can then be calculated. In this paper, the concept for the subsequent stress analysis based on the volume change due to diffusion is also discussed.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133782261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Assessment of thermo-mechanical stresses in Low Temperature Joining Technology 低温连接工艺中热机械应力的评估
T. Herboth, C. Fruh, M. Gunther, J. Wilde
{"title":"Assessment of thermo-mechanical stresses in Low Temperature Joining Technology","authors":"T. Herboth, C. Fruh, M. Gunther, J. Wilde","doi":"10.1109/ESIME.2012.6191762","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191762","url":null,"abstract":"The Low Temperature Joining Technology (LTJT) creates silver joints by a sintering process. It is an alternative die-attach technology to soldering. To initiate the sintering process the temperature has to be raised above ~ 215°C. The quality of a sintered joint is strongly enhanced by applying pressure to the specimen during the process, thus reducing the porosity in the sintered material. After the interconnect process, residual stresses occur in the sintered material, as well as in the joined parts. The examined specimen was a silicon MOSFET attached to a copper substrate at a sintering pressure of 50 MPa. The scope of this paper is to provide information about residual stress after production and thermo-mechanical stresses during thermal cycling. The focus is put on the investigation of the reliability of sintered silver by simulation.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115097287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
A simplified and meaningful crack propagation model in silicon for microelectronic power devices 一种简化且有意义的微电子功率器件硅裂纹扩展模型
D. Calvez, F. Roqueta, S. Jacques, S. Ducret, L. Béchou, Y. Ousten
{"title":"A simplified and meaningful crack propagation model in silicon for microelectronic power devices","authors":"D. Calvez, F. Roqueta, S. Jacques, S. Ducret, L. Béchou, Y. Ousten","doi":"10.1109/ESIME.2012.6191721","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191721","url":null,"abstract":"Wafer handling during the manufacturing process introduces micro-cracks and flaws at the wafer edge. The aim of this work was to determine whether an initial crack would be able to propagate through the silicon active region of power devices when it is subjected to high electro-thermal loads during its application or during thermal cycling tests. We have determined the most critical crack propagation cases. These have been simulated using the ANSYS® FEA software and energy release rate G (ERR) has been calculated for different crack lengths, locations, or thermal loads, and then compared to the silicon critical ERR of the silicon. Temperature profiles that reproduce the typical device operation conditions are retrieved with electro-thermal simulation. Failure analysis performed on these power devices has revealed some typical propagation paths.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"52 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128509795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental and numerical assessment of adhesion in real-life MEMS 实际MEMS中黏附的实验与数值评估
R. Ardito, L. Baldasarre, A. Corigliano, B. de Masi, A. Frangi, L. Magagnin
{"title":"Experimental and numerical assessment of adhesion in real-life MEMS","authors":"R. Ardito, L. Baldasarre, A. Corigliano, B. de Masi, A. Frangi, L. Magagnin","doi":"10.1109/ESIME.2012.6191767","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191767","url":null,"abstract":"The goal of this research is to measure the adhesion energy in experimental devices which are as alike as possible to real-life MEMS and to provide a sound basis for numerical methods which could predict the adhesion energy in various situations. In this way, a better knowledge of adhesion properties is obtained, possibly entailing deeper miniaturization and higher optimization of microstructures. The paper describes the innovative experimental measurements which have been carried out and the comparison with numerical outcomes via Finite Element Method (FEM).","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128182606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal performance evaluation of SiC power devices packaging SiC功率器件封装热性能评价
A. Gracia, S. Azzopardi, E. Woirgard
{"title":"Thermal performance evaluation of SiC power devices packaging","authors":"A. Gracia, S. Azzopardi, E. Woirgard","doi":"10.1109/ESIME.2012.6191731","DOIUrl":"https://doi.org/10.1109/ESIME.2012.6191731","url":null,"abstract":"The development of power components based on silicon carbide (SiC) allows high power densities, size reduction and elevated operating temperatures (above 200 or 300°C). In this study, we present solutions for SiC device packaging base on 3D finite element simulation and experimental approach. Various test vehicles were assembled with different die attach and substrate. New materials like copper carbide (CuC) and copper diamond (Cu-diamond) were selected for base plate. Their thermal performances were evaluated through the measurement of the thermal resistance and 3D finite elements simulations.","PeriodicalId":319207,"journal":{"name":"2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126718618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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