Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications

The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.