Numerical and experimental results correlation during power MOSFET ageing

2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2012-04-16 DOI:10.1109/ESIME.2012.6191798

T. Azoui, P. Tounsi, P. Dupuy, J. Dorkel, D. Martineau

引用次数: 10

Abstract

This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization aging of source terminal. The numerical results were correlated with experiment based on past study.

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功率MOSFET老化过程中数值与实验结果的相关性

本文提出了一种基于三维电热模拟的方法来研究垂直功率MOSFET源端金属化老化引起的故障。在以往研究的基础上，数值计算结果与实验结果相吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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